| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9) |
|---|
| Journal | Journal of Materials Science |
|---|
| Authors | Bouchier, D. | Author |
|---|
| Aboelfotoh, O. | Author |
| Year | 2012 (January) | Volume | 47 |
|---|
| Publisher | Springer Science and Business Media LLC |
|---|
| DOI | doi:10.1007/s10853-011-6031-5Search in ResearchGate |
|---|
| Generate Citation Formats |
|---|
| Mindat Ref. ID | 10010317 | Long-form Identifier | mindat:1:5:10010317:9 |
|---|
|
| GUID | 0 |
|---|
| Full Reference | Bouchier, D., Aboelfotoh, O. (2012) Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9). Journal of Materials Science, 47. 100-103 doi:10.1007/s10853-011-6031-5 |
|---|
| Plain Text | Bouchier, D., Aboelfotoh, O. (2012) Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9). Journal of Materials Science, 47. 100-103 doi:10.1007/s10853-011-6031-5 |
|---|
| In | (n.d.) Journal of Materials Science Vol. 47. Springer Science and Business Media LLC |
|---|
These are possibly similar items as determined by title/reference text matching only.
