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Lee, Pyoung-Chan, Kim, Sieun, Hwang, Taeseon, Oh, Joon-Suk, Oh, Yong-Soo, Pu, Lyongsun, Kim, Byung-Woo, Lee, Youngkwan, Choi, Hyouk Ryeol, Jeoung, Sun Kyoung, Nam, Jae-Do (2012) Tunable surface hardness and dielectric constant of SiC x O y thin film converted from solution-processed organosilicon compound. Journal of Materials Science, 47. 4540-4545 doi:10.1007/s10853-012-6312-7

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Reference TypeJournal (article/letter/editorial)
TitleTunable surface hardness and dielectric constant of SiC x O y thin film converted from solution-processed organosilicon compound
JournalJournal of Materials Science
AuthorsLee, Pyoung-ChanAuthor
Kim, SieunAuthor
Hwang, TaeseonAuthor
Oh, Joon-SukAuthor
Oh, Yong-SooAuthor
Pu, LyongsunAuthor
Kim, Byung-WooAuthor
Lee, YoungkwanAuthor
Choi, Hyouk RyeolAuthor
Jeoung, Sun KyoungAuthor
Nam, Jae-DoAuthor
Year2012 (June)Volume47
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s10853-012-6312-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10010354Long-form Identifiermindat:1:5:10010354:4
GUID0
Full ReferenceLee, Pyoung-Chan, Kim, Sieun, Hwang, Taeseon, Oh, Joon-Suk, Oh, Yong-Soo, Pu, Lyongsun, Kim, Byung-Woo, Lee, Youngkwan, Choi, Hyouk Ryeol, Jeoung, Sun Kyoung, Nam, Jae-Do (2012) Tunable surface hardness and dielectric constant of SiC x O y thin film converted from solution-processed organosilicon compound. Journal of Materials Science, 47. 4540-4545 doi:10.1007/s10853-012-6312-7
Plain TextLee, Pyoung-Chan, Kim, Sieun, Hwang, Taeseon, Oh, Joon-Suk, Oh, Yong-Soo, Pu, Lyongsun, Kim, Byung-Woo, Lee, Youngkwan, Choi, Hyouk Ryeol, Jeoung, Sun Kyoung, Nam, Jae-Do (2012) Tunable surface hardness and dielectric constant of SiC x O y thin film converted from solution-processed organosilicon compound. Journal of Materials Science, 47. 4540-4545 doi:10.1007/s10853-012-6312-7
In(n.d.) Journal of Materials Science Vol. 47. Springer Science and Business Media LLC

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