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Mohamed, S. H., Raaif, M., Abd El-Rahman, A. M. (2012) Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time. Journal of Materials Science, 47. 2875-2881 doi:10.1007/s10853-011-6117-0

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Reference TypeJournal (article/letter/editorial)
TitlePhysical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time
JournalJournal of Materials Science
AuthorsMohamed, S. H.Author
Raaif, M.Author
Abd El-Rahman, A. M.Author
Year2012 (March)Volume47
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s10853-011-6117-0Search in ResearchGate
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Mindat Ref. ID10011066Long-form Identifiermindat:1:5:10011066:5
GUID0
Full ReferenceMohamed, S. H., Raaif, M., Abd El-Rahman, A. M. (2012) Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time. Journal of Materials Science, 47. 2875-2881 doi:10.1007/s10853-011-6117-0
Plain TextMohamed, S. H., Raaif, M., Abd El-Rahman, A. M. (2012) Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time. Journal of Materials Science, 47. 2875-2881 doi:10.1007/s10853-011-6117-0
In(n.d.) Journal of Materials Science Vol. 47. Springer Science and Business Media LLC

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Zeyada, H. M., EL-Nahass, M. M., EL-Shabaan, M. M. (2012) Gamma-ray irradiation induced structural and optical constants changes of thermally evaporated neutral red thin films. Journal of Materials Science, 47. 493-502 doi:10.1007/s10853-011-5825-9
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