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Dalili, Neda, Liu, Qi, Ivey, Douglas G. (2013) Thermal and electrical stability of TaN x diffusion barriers for Cu metallization. Journal of Materials Science, 48. 489-501 doi:10.1007/s10853-012-6763-x

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Reference TypeJournal (article/letter/editorial)
TitleThermal and electrical stability of TaN x diffusion barriers for Cu metallization
JournalJournal of Materials Science
AuthorsDalili, NedaAuthor
Liu, QiAuthor
Ivey, Douglas G.Author
Year2013 (January)Volume48
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s10853-012-6763-xSearch in ResearchGate
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Mindat Ref. ID10011261Long-form Identifiermindat:1:5:10011261:4
GUID0
Full ReferenceDalili, Neda, Liu, Qi, Ivey, Douglas G. (2013) Thermal and electrical stability of TaN x diffusion barriers for Cu metallization. Journal of Materials Science, 48. 489-501 doi:10.1007/s10853-012-6763-x
Plain TextDalili, Neda, Liu, Qi, Ivey, Douglas G. (2013) Thermal and electrical stability of TaN x diffusion barriers for Cu metallization. Journal of Materials Science, 48. 489-501 doi:10.1007/s10853-012-6763-x
In(n.d.) Journal of Materials Science Vol. 48. Springer Science and Business Media LLC

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