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de BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R. (1991) NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991227

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Reference TypeJournal (article/letter/editorial)
TitleNUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES
JournalLe Journal de Physique IV
Authorsde BREE, H. B.Author
HAAFKENS, M. H.Author
MICHORIUS, M. M.Author
WOLFF, L. R.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991227Search in ResearchGate
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Mindat Ref. ID10295517Long-form Identifiermindat:1:5:10295517:2
GUID0
Full Referencede BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R. (1991) NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991227
Plain Textde BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R. (1991) NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991227
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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RUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297
HAMMOND, M. L. (1991) CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991255
McNEILL, D. W., LIANG, Y., MONTGOMERY, J. H., GAMBLE, H. S., ARMSTRONG, B. M. (1991) EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991291
WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
BRENNFLECK, K., REICH, H. (1991) CVD OF SiC IN LARGE COATING VESSELS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991257
Worswick, M. J., Nahme, H., Fowler, J. (1994) Spall through void nucleation, growth and coalescence. Le Journal de Physique IV, 4. doi:10.1051/jp4:1994894
CHURAEVA, M. N. (1993) Ellipsometric analysis for CVD thick films on weakly absorbing substrates. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993324
DANZINGER, M., PENG, J., HAUBNER, R., LUX, B. (1991) INFLUENCE OF CH4 AND Ar ON THE MORPHOLOGIES OF Al2O3 - CVD COATINGS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991268
MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
SCHMADERER, F., HUBER, R., OETZMANN, H., WAHL, G. (1991) HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991264
 
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