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NORMAN, J. A.T., MURATORE, B. A., DYER, P. N., ROBERTS, D. A., HOCHBERG, A. K. (1991) NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991233

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Reference TypeJournal (article/letter/editorial)
TitleNEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION
JournalLe Journal de Physique IV
AuthorsNORMAN, J. A.T.Author
MURATORE, B. A.Author
DYER, P. N.Author
ROBERTS, D. A.Author
HOCHBERG, A. K.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991233Search in ResearchGate
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Mindat Ref. ID10295523Long-form Identifiermindat:1:5:10295523:3
GUID0
Full ReferenceNORMAN, J. A.T., MURATORE, B. A., DYER, P. N., ROBERTS, D. A., HOCHBERG, A. K. (1991) NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991233
Plain TextNORMAN, J. A.T., MURATORE, B. A., DYER, P. N., ROBERTS, D. A., HOCHBERG, A. K. (1991) NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991233
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

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Norman, J. A.T. (2001) Advances in copper CVD for the semiconductor industry. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001363
RIE, K.-T., WÖHLE, J., GEBAUER, A. (1991) PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991248
Gould, P. J., Goldthorpe, B. D. (2000) A path-dependent constitutive model for gilding copper. Le Journal de Physique IV, 10. doi:10.1051/jp4:2000907
JONES, A.C . (1991) METALORGANIC PRECURSORS FOR SEMICONDUCTORS REQUIREMENTS AND RECENT DEVELOPMENTS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991231
GRABIEC, P. B., LYSKO, J. M. (1991) MICROENGINEERING - THE NEW APPLICATION OF CHEMICAL VAPOR DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912107
PILKINGTON, R. D., JONES, P. A., AHMED, W., TOMLINSON, R. D., HILL, A. E., SMITH, J. J., NUTTALL, R. (1991) LOW PRESSURE MOCVD OF COPPER BASED COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991232
BACHMANN, P. K., LEERS, D., WIECHERT, D. U. (1991) DIAMOND CHEMICAL VAPOUR DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912109
Belakhovsky, M., Gilles, B., Kamp, P., Marty, A., Goedkoop, J. B., Brookes, N. B. (1997) Induced Copper Magnetism in Permalloy-Copper Bilayers. Le Journal de Physique IV, 7. doi:10.1051/jp4/1997043
SAUGNAC, F., TEYSSANDIER, F., MARCHAND, A. (1991) NEW COMPOUNDS OBTAINED BY LPCVD IN THE B-C-N CHEMICAL SYSTEM. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991281
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
Tahir, N. A., Hoffmann, D. H.H., Kozyreva, A., Maruhn, J. A., Neuner, U., Tauschwitz, A., Spiller, P., Shutov, A., Bock, R. (2000) Hydrogen metallization in heavy-ion imploded multi-layered targets. Le Journal de Physique IV, 10. doi:10.1051/jp4:2000562
 
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