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FAKIH, C., BES, R. S., ARMAS, B., THENEGAL, D. (1991) PLASMA DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991250

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Reference TypeJournal (article/letter/editorial)
TitlePLASMA DEPOSITION OF SILICON NITRIDE
JournalLe Journal de Physique IV
AuthorsFAKIH, C.Author
BES, R. S.Author
ARMAS, B.Author
THENEGAL, D.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991250Search in ResearchGate
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Mindat Ref. ID10295540Long-form Identifiermindat:1:5:10295540:0
GUID0
Full ReferenceFAKIH, C., BES, R. S., ARMAS, B., THENEGAL, D. (1991) PLASMA DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991250
Plain TextFAKIH, C., BES, R. S., ARMAS, B., THENEGAL, D. (1991) PLASMA DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991250
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

These are possibly similar items as determined by title/reference text matching only.

ASPAR, B., ARMAS, B., COMBESCURE, C., THENEGAL, D. (1991) CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991280
Henry, F., Armas, B., Combescure, C., Thenegal, D., Flamand, R. (1995) Chemical Vapour Deposition of AIN-Si3N4 Codeposits. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995593
ALEXANDROV, S. E., KOVALGIN, A. Y. (1991) REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912100
Armas, B., de Icaza Herrera, M., Combescure, C., Sibieude, F., Thenegal, D. (1999) Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999849
KANOH, H., SUGIURA, O., FUJIOKA, S., ARAMAKI, Y., HATTORI, T., MATSUMURA, M. (1991) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991298
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
WANG, Y., CHAUSSAVOINE, C., TEYSSANDIER, F. (1991) 2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991204
BACHMANN, P. K., LEERS, D., WIECHERT, D. U. (1991) DIAMOND CHEMICAL VAPOUR DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912109
BECHT, J. G.M., BATH, A., HENGST, E., VAN DER PUT, P.J., SCHOONMAN, J. (1991) DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991274
CHEHOUANI, H., ARMAS, B., COMBESCURE, C., BENET, S ., BRUNET, S. (1991) EXPERIMENTAL STUDY AND NUMERICAL SIMULATION OF HYDRODYNAMICS AND HEAT TRANSFER IN A COLD-WALL CVD REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991221
ALEXANDROV, S. E., HITCHMAN, M. L., SHAMLIAN, S. (1993) A study of remote plasma enhanced CVD of silicon nitride films. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993331
 
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