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Korevaar, G., Besling, W., Goossens, A., Schoonman, J. (1999) In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitride. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999896

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Reference TypeJournal (article/letter/editorial)
TitleIn situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitride
JournalLe Journal de Physique IV
AuthorsKorevaar, G.Author
Besling, W.Author
Goossens, A.Author
Schoonman, J.Author
Year1999 (September)Volume9
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1999896Search in ResearchGate
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Mindat Ref. ID10301116Long-form Identifiermindat:1:5:10301116:7
GUID0
Full ReferenceKorevaar, G., Besling, W., Goossens, A., Schoonman, J. (1999) In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitride. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999896
Plain TextKorevaar, G., Besling, W., Goossens, A., Schoonman, J. (1999) In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitride. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999896
In(n.d.) Le Journal de Physique IV Vol. 9. EDP Sciences


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