Reference Type | Journal (article/letter/editorial) |
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Title | Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films |
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Journal | Le Journal de Physique IV |
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Authors | Meester, B. | Author |
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Reijnen, L. | Author |
Goossens, A. | Author |
Schoonman, J. | Author |
Year | 2001 (August) | Volume | 11 |
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Publisher | EDP Sciences |
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DOI | doi:10.1051/jp4:20013144Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 10302054 | Long-form Identifier | mindat:1:5:10302054:1 |
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GUID | 0 |
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Full Reference | Meester, B., Reijnen, L., Goossens, A., Schoonman, J. (2001) Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013144 |
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Plain Text | Meester, B., Reijnen, L., Goossens, A., Schoonman, J. (2001) Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013144 |
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In | (n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences |
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