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Shimamune, Y., Sakuraba, M., Matsuura, T., Murota, J. (2001) Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001332

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4
JournalLe Journal de Physique IV
AuthorsShimamune, Y.Author
Sakuraba, M.Author
Matsuura, T.Author
Murota, J.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:2001332Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302079Long-form Identifiermindat:1:5:10302079:4
GUID0
Full ReferenceShimamune, Y., Sakuraba, M., Matsuura, T., Murota, J. (2001) Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001332
Plain TextShimamune, Y., Sakuraba, M., Matsuura, T., Murota, J. (2001) Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001332
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Watanabe, T., Sakuraba, M., Matsuura, T., Murota, J. (1999) Layer-by-layer growth of silicon nitride films by NH3 and SiH4. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999841
Yamamoto, Y., Matsuura, T., Murota, J. (1999) H-termination effects on initial growth characteristics of W on Si using WF6 and SiH4 gases. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999854
Jeong, Youngcheon, Sakuraba, Masao, Murota, Junichi (2004) Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4. Applied Surface Science, 224. 197-201 doi:10.1016/j.apsusc.2003.08.034
MUROTA, J., HONMA, F., YOSHIDA, T., GOTO, K., MAEDA, T., AIZAWA, K., SAWADA, Y. (1993) Low-temperature epitaxial growth of in-situ B-doped Si1-xGex films. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993359
Murota, J., Sakuraba, M., Watanabe, T., Matsuura, T., Sawada, Y. (1995) Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:19955130
SAKURABA, M., MUROTA, J., ONO, S. (1993) Silicon atomic layer growth using flash heating in CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993362
Murota, J., Takasawa, Y., Fujimoto, H., Goto, K., Matsuura, T., Sawada, Y. (1995) Low-Temperature Epitaxial Growth Mechanism of Si1-xGex Films in the Silane and Germane Reactions. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:19955138
Jeong, Youngcheon, Sakuraba, Masao, Murota, Junichi (2003) Atomic-layer doping in Si by alternately supplied NH3 and SiH4. Applied Physics Letters, 82 (20). 3472-3474 doi:10.1063/1.1576910
Pignard, S., Audier, M., Vincent, H., Sénateur, J. P. (2001) Substrate deformation induced by epitaxial La0.8MnO3-δ thin films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20011140
Shimamune, Yosuke, Sakuraba, Masao, Murota, Junichi, Tillack, Bernd (2004) Formation of heavily P-doped Si epitaxial film on Si(100) by multiple atomic-layer doping technique. Applied Surface Science, 224. 202-205 doi:10.1016/j.apsusc.2003.08.033
Hofstätter, M., Atakan, B., Kohse-Höinghaus, K. (2001) CVD growth of silicon films at high rates. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001337
 
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