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Parala, H., Devi, A., Rogge, W., Birkner, A., Fischer, R. A. (2001) Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001360

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Reference TypeJournal (article/letter/editorial)
TitleSynthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors
JournalLe Journal de Physique IV
AuthorsParala, H.Author
Devi, A.Author
Rogge, W.Author
Birkner, A.Author
Fischer, R. A.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:2001360Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302107Long-form Identifiermindat:1:5:10302107:4
GUID0
Full ReferenceParala, H., Devi, A., Rogge, W., Birkner, A., Fischer, R. A. (2001) Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001360
Plain TextParala, H., Devi, A., Rogge, W., Birkner, A., Fischer, R. A. (2001) Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001360
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Devi, A., Parala, H., Rogge, W., Wohlfart, A., Birkner, A., Fischer, R. A. (2001) Growth of InN whiskers from single source precursor. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001373
Wohlfart, A., Devi, A., Hipler, F., Becker, H. W., Fischer, R. A. (2001) Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001387
Devi, A., Rogge, W., Fischer, R. A., Stowasser, F., Sussek, H., Becker, H. W., Schäfer, J., Wolfrum, J. (1999) OMVPE of GaN using (N3)2Ga[(CH2)3N(CH3)2] (BAZIGA) in a cold wall reactor. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999874
Becker, R., Weiß, J., Devi, A., Fischer, R. A. (2001) Chemical vapour deposition of copper using copper(II) alkoxides. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001372
Hu, Z. J., Zhang, W. G., Hüttinger, K. J. (2001) An extended interpretation of chemical vapor infiltration of carbon. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001339
Lee, K.-B., Choi, C.-S., Oh, S. J., Ri, H.-C., Cheon, J. (2001) Synthesis of nanocomposite Pd balls and wires by chemical vapor infiltration. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001361
Müller, J., Witting, B., Sternkicker, H., Bendix, S. (2001) Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation : A powerful technique. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001302
Thévenin, P., Soltani, A., Bath, A. (2001) Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013101
Merz, K., Schoenen, R., Driess, M. (2001) Nanocrystalline ZnO from siloxy-substituted single-source precursors. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001359
Ricceri, R., Arcuri, F., Matteazzi, P. (2001) Porous titanium obtained by P/M. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001407
Levesque, A., Bouteville, A. (2001) Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013114
 
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