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Sanz-Hervás, A., Abril, E. J., Paz, D. I., de Benito, G., Llorente, C., Aguilar, M., López, M. (1995) Characterisation of semiconductor structures by high resolution X-ray diffraction. Materials Science and Technology, 11. 72-79 doi:10.1179/mst.1995.11.1.72

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Reference TypeJournal (article/letter/editorial)
TitleCharacterisation of semiconductor structures by high resolution X-ray diffraction
JournalMaterials Science and Technology
AuthorsSanz-Hervás, A.Author
Abril, E. J.Author
Paz, D. I.Author
de Benito, G.Author
Llorente, C.Author
Aguilar, M.Author
López, M.Author
Year1995 (January)Volume11
PublisherInforma UK Limited
DOIdoi:10.1179/mst.1995.11.1.72Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10304089Long-form Identifiermindat:1:5:10304089:1
GUID0
Full ReferenceSanz-Hervás, A., Abril, E. J., Paz, D. I., de Benito, G., Llorente, C., Aguilar, M., López, M. (1995) Characterisation of semiconductor structures by high resolution X-ray diffraction. Materials Science and Technology, 11. 72-79 doi:10.1179/mst.1995.11.1.72
Plain TextSanz-Hervás, A., Abril, E. J., Paz, D. I., de Benito, G., Llorente, C., Aguilar, M., López, M. (1995) Characterisation of semiconductor structures by high resolution X-ray diffraction. Materials Science and Technology, 11. 72-79 doi:10.1179/mst.1995.11.1.72
In(n.d.) Materials Science and Technology Vol. 11. Informa UK Limited

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Sanz‐Hervás, A., Aguilar, M., Sánchez‐Rojas, J. L., Sacedón, A., Calleja, E., Muñoz, E., Abril, E. J., López, M. (1996) High‐resolution x‐ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p‐i‐n photodiodes grown on (111)B GaAs. Applied Physics Letters, 69 (11). 1574-1576 doi:10.1063/1.117034
Villar, C, Sanz-Hervás, A, Aguilar, M, Vaccaro, P.O, Abril, E.J, López, M, Fujita, K (2000) High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11n)A GaAs. Journal of Crystal Growth, 213 (3). 214-220 doi:10.1016/s0022-0248(00)00368-7
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