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Marí, B., Fenollosa, R., Manjón, F. J., Clemente, R., Muñoz, V., Segura, A. (1997) Neutron transmutation doping of III–VI layered semiconductors. Materials Science and Technology, 13. 954-956 doi:10.1179/mst.1997.13.11.954

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Reference TypeJournal (article/letter/editorial)
TitleNeutron transmutation doping of III–VI layered semiconductors
JournalMaterials Science and Technology
AuthorsMarí, B.Author
Fenollosa, R.Author
Manjón, F. J.Author
Clemente, R.Author
Muñoz, V.Author
Segura, A.Author
Year1997 (November)Volume13
PublisherInforma UK Limited
DOIdoi:10.1179/mst.1997.13.11.954Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10304482Long-form Identifiermindat:1:5:10304482:0
GUID0
Full ReferenceMarí, B., Fenollosa, R., Manjón, F. J., Clemente, R., Muñoz, V., Segura, A. (1997) Neutron transmutation doping of III–VI layered semiconductors. Materials Science and Technology, 13. 954-956 doi:10.1179/mst.1997.13.11.954
Plain TextMarí, B., Fenollosa, R., Manjón, F. J., Clemente, R., Muñoz, V., Segura, A. (1997) Neutron transmutation doping of III–VI layered semiconductors. Materials Science and Technology, 13. 954-956 doi:10.1179/mst.1997.13.11.954
In(n.d.) Materials Science and Technology Vol. 13. Informa UK Limited

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Sealy, B. J. (1988) Ion implantation doping of semiconductors. Materials Science and Technology, 4. 500-512 doi:10.1179/mst.1988.4.6.500
de la Cruz, R.M., Pareja, R., Segura, A., Muñoz, V., Chevy, A. (1992) Temperature Dependence of the Positron Annihilation Parameters in III-VI Layered Semiconductors. Materials Science Forum, 105. 961-964 doi:10.4028/www.scientific.net/msf.105-110.961
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