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Chabal, Y. J., Raghavachari, Krishnan (1984) Surface Infrared Study of Si(100)-(2Γ—1)H. Physical Review Letters, 53 (3). 282-285 doi:10.1103/physrevlett.53.282

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Reference TypeJournal (article/letter/editorial)
TitleSurface Infrared Study of Si(100)-(2Γ—1)H
JournalPhysical Review Letters
AuthorsChabal, Y. J.Author
Raghavachari, KrishnanAuthor
Year1984 (July 16)Volume53
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.53.282Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10542816Long-form Identifiermindat:1:5:10542816:1
GUID0
Full ReferenceChabal, Y. J., Raghavachari, Krishnan (1984) Surface Infrared Study of Si(100)-(2Γ—1)H. Physical Review Letters, 53 (3). 282-285 doi:10.1103/physrevlett.53.282
Plain TextChabal, Y. J., Raghavachari, Krishnan (1984) Surface Infrared Study of Si(100)-(2Γ—1)H. Physical Review Letters, 53 (3). 282-285 doi:10.1103/physrevlett.53.282
In(1984, July) Physical Review Letters Vol. 53 (3) American Physical Society (APS)

See Also

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Chabal, Y. J., Raghavachari, Krishnan (1985) New Ordered Structure for the H-Saturated Si(100) Surface: The (3Γ—1) Phase. Physical Review Letters, 54 (10). 1055-1058 doi:10.1103/physrevlett.54.1055
Weldon, Marcus K., Stefanov, Boris B., Raghavachari, Krishnan, Chabal, Y. J. (1997) InitialH2O-induced Oxidation of Si(100)–(2Γ—1). Physical Review Letters, 79 (15). 2851-2854 doi:10.1103/physrevlett.79.2851
Queeney, K. T., Chabal, Y. J., Raghavachari, Krishnan (2001) Role of Interdimer Interactions inNH3Dissociation onSi(100)βˆ’(2Γ—1). Physical Review Letters, 86 (6). 1046-1049 doi:10.1103/physrevlett.86.1046
Tully, J. C., Chabal, Y. J., Raghavachari, Krishnan, Bowman, J. M., Lucchese, R. R. (1985) Infrared linewidths and vibrational lifetimes at surfaces: H on Si(100) Physical Review B, 31 (2) 1184-1186 doi:10.1103/physrevb.31.1184
Chabal, Y. J., Patel, C. K. N. (1984) Infrared Absorption ina-Si: H: First Observation of Gaseous MolecularH2and Si-H Overtone. Physical Review Letters, 53 (2). 210-213 doi:10.1103/physrevlett.53.210
Chabal, Y. J., Raghavachari, Krishnan, Zhang, X., Garfunkel, E. (2002) Silanone(Si=O)on Si(100): intermediate for initial silicon oxidation. Physical Review B, 66 (16) doi:10.1103/physrevb.66.161315
Trucks, G. W., Raghavachari, Krishnan, Higashi, G. S., Chabal, Y. J. (1991) Truckset al. reply. Physical Review Letters, 66 (12). 1648 doi:10.1103/physrevlett.66.1648
Halls, Mathew D., Raghavachari, Krishnan, Frank, Martin M., Chabal, Yves J. (2003) Atomic layer deposition ofAl2O3on H-passivated Si: Al(CH3)2OHsurface reactions withH/Si(100)βˆ’2Γ—1. Physical Review B, 68 (16) doi:10.1103/physrevb.68.161302
Chabal, Y. J., Sievers, A. J. (1980) High-Resolution Infrared Study of Hydrogen (1Γ—1) on Tungsten (100). Physical Review Letters, 44 (16). 1094 doi:10.1103/physrevlett.44.1094.4
Chabal, Y. J., Sievers, A. J. (1980) High-Resolution Infrared Study of Hydrogen (1Γ—1) on Tungsten (100). Physical Review Letters, 44 (14). 944-947 doi:10.1103/physrevlett.44.944
Jakob, P., Chabal, Y.J., Raghavachari, Krishnan, Dumas, P., Christman, S.B. (1993) Imperfections on the chemically prepared, ideally H-terminated Si(111)-(1 Γ— 1) surfaces. Surface Science Letters, 285 (3). doi:10.1016/0167-2584(93)90371-o
 
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