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Chang, Y., Hwu, Y., Hansen, J., Zanini, F., Margaritondo, G. (1989) Nature of the Schottky term in the Schottky barrier. Physical Review Letters, 63 (17). 1845-1848 doi:10.1103/physrevlett.63.1845

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Reference TypeJournal (article/letter/editorial)
TitleNature of the Schottky term in the Schottky barrier
JournalPhysical Review Letters
AuthorsChang, Y.Author
Hwu, Y.Author
Hansen, J.Author
Zanini, F.Author
Margaritondo, G.Author
Year1989 (October 23)Volume63
Issue17
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.63.1845Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10551477Long-form Identifiermindat:1:5:10551477:2
GUID0
Full ReferenceChang, Y., Hwu, Y., Hansen, J., Zanini, F., Margaritondo, G. (1989) Nature of the Schottky term in the Schottky barrier. Physical Review Letters, 63 (17). 1845-1848 doi:10.1103/physrevlett.63.1845
Plain TextChang, Y., Hwu, Y., Hansen, J., Zanini, F., Margaritondo, G. (1989) Nature of the Schottky term in the Schottky barrier. Physical Review Letters, 63 (17). 1845-1848 doi:10.1103/physrevlett.63.1845
In(1989, October) Physical Review Letters Vol. 63 (17) American Physical Society (APS)

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Chang, Y., Hansen, J.C., Zanini, F., Hwu, Y., Margaritondo, G. (1989) Photoemission studies of silicon chemisorption on Al(110). Surface Science Letters, 211. doi:10.1016/0167-2584(89)90371-x
Chang, Y., Hansen, J.C., Zanini, F., Hwu, Y., Margaritondo, G. (1989) Photoemission studies of Silicon chemisorption on Al(110). Surface Science, 211. 637-640 doi:10.1016/0039-6028(89)90823-6
Hwu, Y., Marsi, M., Alméras, P., Margaritondo, G. (1992) Microscopic Schottky-barrier control: Semiconductor-on-metal case. Physical Review B, 46 (3) 1835-1837 doi:10.1103/physrevb.46.1835
Weon, B. M., Je, J. H., Hwu, Y., Margaritondo, G. (2009) Weonet al.Reply:. Physical Review Letters, 102 (17). doi:10.1103/physrevlett.102.179702
Ortega, J., GarcĂ­a-Vidal, F. J., PĂ©rez, R., RincĂłn, R., Flores, F., Coluzza, C., Gozzo, F., Margaritondo, G., Hwu, Y., Lozzi, L., La Rosa, S. (1992) Early stages of Schottky-barrier formation for Al deposited on GaAs(110) Physical Review B, 46 (16) 10277-10283 doi:10.1103/physrevb.46.10277
Rowe, J. E., Christman, S. B., Margaritondo, G. (1975) Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAs. Physical Review Letters, 35 (21). 1471-1475 doi:10.1103/physrevlett.35.1471
Kelly, M. K., Meng, Y., Hwu, Y., Chang, Y., Chen, Y., Lapeyre, G. J., Margaritondo, G. (1989) Low-energy excitations in Cu-O–based superconductors with electron-energy-loss spectroscopy. Physical Review B, 40 (16) 11309-11312 doi:10.1103/physrevb.40.11309
Salis, G., Alvarado, S. F. (2006) Interferometric Detection of Spin-Polarized Transport in the Depletion Layer of a Metal-GaAs Schottky Barrier. Physical Review Letters, 96 (17). doi:10.1103/physrevlett.96.177401
Ortega, J., Flores, F. (1989) Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110). Physical Review Letters, 63 (22). 2500-2503 doi:10.1103/physrevlett.63.2500
Weon, B. M., Je, J. H., Hwu, Y., Margaritondo, G. (2008) Decreased Surface Tension of Water by Hard-X-Ray Irradiation. Physical Review Letters, 100 (21). doi:10.1103/physrevlett.100.217403
Spicer, William E., Cao, Renyu (1989) Schottky-Barrier Formation and Metallicity. Physical Review Letters, 62 (5). 605 doi:10.1103/physrevlett.62.605
 
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