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Pudalov, V. M., Gershenson, M. E., Kojima, H., Butch, N., Dizhur, E. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers. Physical Review Letters, 88 (19). doi:10.1103/physrevlett.88.196404

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Reference TypeJournal (article/letter/editorial)
TitleLow-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers
JournalPhysical Review Letters
AuthorsPudalov, V. M.Author
Gershenson, M. E.Author
Kojima, H.Author
Butch, N.Author
Dizhur, E. M.Author
Brunthaler, G.Author
Prinz, A.Author
Bauer, G.Author
Year2002 (April 30)Volume88
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.88.196404Search in ResearchGate
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Mindat Ref. ID10585611Long-form Identifiermindat:1:5:10585611:7
GUID0
Full ReferencePudalov, V. M., Gershenson, M. E., Kojima, H., Butch, N., Dizhur, E. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers. Physical Review Letters, 88 (19). doi:10.1103/physrevlett.88.196404
Plain TextPudalov, V. M., Gershenson, M. E., Kojima, H., Butch, N., Dizhur, E. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers. Physical Review Letters, 88 (19). doi:10.1103/physrevlett.88.196404
In(2002, April) Physical Review Letters Vol. 88 (19) American Physical Society (APS)

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Pudalov, V. M., Gershenson, M., Kojima, H., Busch, N., Dizhur, E. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Pudalovet al.Reply:. Physical Review Letters, 89 (21). doi:10.1103/physrevlett.89.219702
Pudalov, V. M., Gershenson, M. E., Kojima, H., Brunthaler, G., Prinz, A., Bauer, G. (2003) Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures. Physical Review Letters, 91 (12). doi:10.1103/physrevlett.91.126403
Kojima, H., E. Gershenson, M., M. Pudalov, V., Brunthaler, G., Prinz, A., Bauer, G. (2003) Interaction Effects in Electron Transport in Si Inversion Layers. Journal of the Physical Society of Japan, 72. 57-62 doi:10.1143/jpsjs.72sa.57
Pudalov, V. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si-Inversion Layers. Physical Review Letters, 88 (7). doi:10.1103/physrevlett.88.076401
Pudalov, V., Gershenson, M., Kojima, H., Brunthaler, G., Bauer, G. (2004) Pudalovet al.Reply:. Physical Review Letters, 93 (26). doi:10.1103/physrevlett.93.269704
Pudalov, V. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Pudalovet al.Reply:. Physical Review Letters, 89 (12). doi:10.1103/physrevlett.89.129702
Kravchenko, S. V., Shashkin, A. A., Dolgopolov, V. T. (2002) Comment on “Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers”. Physical Review Letters, 89 (21). doi:10.1103/physrevlett.89.219701
Brunthaler, G., Prinz, A., Bauer, G., Pudalov, V. M. (2001) Exclusion of Quantum Coherence as the Origin of the 2D Metallic State in High-Mobility Silicon Inversion Layers. Physical Review Letters, 87 (9). doi:10.1103/physrevlett.87.096802
Klimov, N. N., Knyazev, D. A., Omel’yanovskii, O. E., Pudalov, V. M., Kojima, H., Gershenson, M. E. (2008) Interaction effects in conductivity of a two-valley electron system in high-mobility Si inversion layers. Physical Review B, 78 (19) doi:10.1103/physrevb.78.195308
Pudalov, V. M., Brunthaler, G., Prinz, A., Bauer, G. (1999) Maximum metallic conductivity in Si-MOS structures. Physical Review B, 60 (4) doi:10.1103/physrevb.60.r2154
Pudalov, V. M., Gershenson, M. E., Kojima, H., Brunthaler, G., Bauer, G. (2004) Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?. physica status solidi (b), 241 (1). 47-53 doi:10.1002/pssb.200303634
 
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