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Orellana, W., da Silva, Antônio J. R., Fazzio, A. (2003) Oxidation at theSi/SiO2Interface: Influence of the Spin Degree of Freedom. Physical Review Letters, 90 (1). doi:10.1103/physrevlett.90.016103

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Reference TypeJournal (article/letter/editorial)
TitleOxidation at theSi/SiO2Interface: Influence of the Spin Degree of Freedom
JournalPhysical Review Letters
AuthorsOrellana, W.Author
da Silva, Antônio J. R.Author
Fazzio, A.Author
Year2003 (January 8)Volume90
Issue1
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.90.016103Search in ResearchGate
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Mindat Ref. ID10588276Long-form Identifiermindat:1:5:10588276:5
GUID0
Full ReferenceOrellana, W., da Silva, Antônio J. R., Fazzio, A. (2003) Oxidation at theSi/SiO2Interface: Influence of the Spin Degree of Freedom. Physical Review Letters, 90 (1). doi:10.1103/physrevlett.90.016103
Plain TextOrellana, W., da Silva, Antônio J. R., Fazzio, A. (2003) Oxidation at theSi/SiO2Interface: Influence of the Spin Degree of Freedom. Physical Review Letters, 90 (1). doi:10.1103/physrevlett.90.016103
In(2003, January) Physical Review Letters Vol. 90 (1) American Physical Society (APS)

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Orellana, W., da Silva, Antônio, Fazzio, A. (2001) O2 Diffusion in SiO2: Triplet versus Singlet. Physical Review Letters, 87 (15). doi:10.1103/physrevlett.87.155901
Novaes, Frederico D., da Silva, Antônio J. R., da Silva, E. Z., Fazzio, A. (2003) Effect of Impurities in the Large Au-Au Distances in Gold Nanowires. Physical Review Letters, 90 (3). doi:10.1103/physrevlett.90.036101
Orellana, W., da Silva, Antônio J. R., Fazzio, A. (2004) Diffusion-reaction mechanisms of nitriding species inSiO2. Physical Review B, 70 (12) doi:10.1103/physrevb.70.125206
Novaes, Frederico D., da Silva, Antônio J. R., da Silva, E. Z., Fazzio, A. (2006) Oxygen Clamps in Gold Nanowires. Physical Review Letters, 96 (1). doi:10.1103/physrevlett.96.016104
Orellana, W., da Silva, Antônio J. R., Fazzio, A. (2005) Oxygen-induced atomic desorptions in oxynitrides: Density functional calculations. Physical Review B, 72 (20) doi:10.1103/physrevb.72.205316
da Silva, E., da Silva, Antônio, Fazzio, A. (2001) How Do Gold Nanowires Break?. Physical Review Letters, 87 (25). doi:10.1103/physrevlett.87.256102
Scopel, W. L., da Silva, Antônio J. R., Orellana, W., Prado, R. J., Fantini, M. C. A., Fazzio, A., Pereyra, I. (2003) Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films. Physical Review B, 68 (15) doi:10.1103/physrevb.68.155332
Bongiorno, Angelo, Pasquarello, Alfredo, Hybertsen, Mark S., Feldman, L. C. (2003) Transition Structure at theSi(100)−SiO2Interface. Physical Review Letters, 90 (18). doi:10.1103/physrevlett.90.186101
Hobi, Edwin, Fazzio, A., da Silva, Antônio J. R. (2008) Temperature and Quantum Effects in the Stability of Pure and Doped Gold Nanowires. Physical Review Letters, 100 (5). doi:10.1103/physrevlett.100.056104
Martins, T. B., Miwa, R. H., da Silva, Antônio J. R., Fazzio, A. (2007) Electronic and Transport Properties of Boron-Doped Graphene Nanoribbons. Physical Review Letters, 98 (19). doi:10.1103/physrevlett.98.196803
Dalpian, G. M., Fazzio, A., da Silva, Antônio J. R. (2001) Adsorption of monomers on semiconductors and the importance of surface degrees of freedom. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205303
 
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