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Tadayyon-Eslami, T., Kan, H.-C., Calhoun, L. C., Phaneuf, R. J. (2006) Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001). Physical Review Letters, 97 (12). doi:10.1103/physrevlett.97.126101

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)
JournalPhysical Review Letters
AuthorsTadayyon-Eslami, T.Author
Kan, H.-C.Author
Calhoun, L. C.Author
Phaneuf, R. J.Author
Year2006 (September 18)Volume97
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.97.126101Search in ResearchGate
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Mindat Ref. ID10601897Long-form Identifiermindat:1:5:10601897:2
GUID0
Full ReferenceTadayyon-Eslami, T., Kan, H.-C., Calhoun, L. C., Phaneuf, R. J. (2006) Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001). Physical Review Letters, 97 (12). doi:10.1103/physrevlett.97.126101
Plain TextTadayyon-Eslami, T., Kan, H.-C., Calhoun, L. C., Phaneuf, R. J. (2006) Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001). Physical Review Letters, 97 (12). doi:10.1103/physrevlett.97.126101
In(2006, September) Physical Review Letters Vol. 97 (12) American Physical Society (APS)

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Kan, H.-C., Ankam, R., Shah, S., Micholsky, K. M., Tadayyon-Eslami, T., Calhoun, L., Phaneuf, R. J. (2006) Evolution of patterned GaAs(001) during homoepitaxial growth: Size versus spacing. Physical Review B, 73 (19) doi:10.1103/physrevb.73.195410
Kan, H.-C., Shah, S., Tadyyon-Eslami, T., Phaneuf, R. J. (2004) Transient Evolution of Surface Roughness on Patterned GaAs(001) during Homoepitaxial Growth. Physical Review Letters, 92 (14). doi:10.1103/physrevlett.92.146101
Shah, S., Garrett, T. J., Limpaphayom, K., Tadayyon-Eslami, T., Kan, H. C., Phaneuf, R. J. (2003) Patterning-based investigation of the length-scale dependence of the surface evolution during multilayer epitaxial growth. Applied Physics Letters, 83 (21). 4330-4332 doi:10.1063/1.1630170
Kan, Hung-Chih, Tadyyon-Eslami, Tabassom, Phaneuf, R. J. (2004) Kanet al.Reply:. Physical Review Letters, 93 (15). doi:10.1103/physrevlett.93.159602
Ballestad, A., Tiedje, T., Schmid, J. H. (2004) Comment on “Transient Evolution of Surface Roughness on Patterned GaAs(001) During Homoepitaxial Growth”. Physical Review Letters, 93 (15). doi:10.1103/physrevlett.93.159601
Kwon, T., Phaneuf, R. J., Kan, H.-C. (2006) Length-scale dependence of the step bunch self-organization on patterned vicinal Si(111) surfaces. Applied Physics Letters, 88 (7). 71914pp. doi:10.1063/1.2175501
Phaneuf, R. J., Bartelt, N. C., Williams, Ellen D., Swiech, W., Bauer, E. (1993) Crossover from metastable to unstable facet growth on Si(111). Physical Review Letters, 71 (14). 2284-2287 doi:10.1103/physrevlett.71.2284
Bishop, K. J. M., Grzybowski, B. A. (2006) Localized Chemical Wave Emission and Mode Switching in a Patterned Excitable Medium. Physical Review Letters, 97 (12). doi:10.1103/physrevlett.97.128702
Aspnes, D. E., Chang, Y. C., Studna, A. A., Florez, L. T., Farrell, H. H., Harbison, J. P. (1990) Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs. Physical Review Letters, 64 (2). 192-195 doi:10.1103/physrevlett.64.192
Das, A. K., Pampuch, C., Ney, A., Hesjedal, T., Däweritz, L., Koch, R., Ploog, K. H. (2003) Ferromagnetism of MnAs Studied by Heteroepitaxial Films on GaAs(001). Physical Review Letters, 91 (8). doi:10.1103/physrevlett.91.087203
Avery, A. R., Goringe, C. M., Holmes, D. M., Sudijono, J. L., Jones, T. S. (1996) Mechanism for Disorder on GaAs(001)-(2Ă—4)Surfaces. Physical Review Letters, 76 (18). 3344-3347 doi:10.1103/physrevlett.76.3344
 
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