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Kinoshita, Joji (1972) Piezoresistance and Piezo-Hall Effect in Heavily Dopedn-Type Silicon. Journal of the Physical Society of Japan, 33 (3). 743-746 doi:10.1143/jpsj.33.743

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Reference TypeJournal (article/letter/editorial)
TitlePiezoresistance and Piezo-Hall Effect in Heavily Dopedn-Type Silicon
JournalJournal of the Physical Society of Japan
AuthorsKinoshita, JojiAuthor
Year1972 (September 15)Volume33
Issue3
PublisherPhysical Society of Japan
DOIdoi:10.1143/jpsj.33.743Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID11190131Long-form Identifiermindat:1:5:11190131:3
GUID0
Full ReferenceKinoshita, Joji (1972) Piezoresistance and Piezo-Hall Effect in Heavily Dopedn-Type Silicon. Journal of the Physical Society of Japan, 33 (3). 743-746 doi:10.1143/jpsj.33.743
Plain TextKinoshita, Joji (1972) Piezoresistance and Piezo-Hall Effect in Heavily Dopedn-Type Silicon. Journal of the Physical Society of Japan, 33 (3). 743-746 doi:10.1143/jpsj.33.743
In(1972, September) Journal of the Physical Society of Japan Vol. 33 (3) Physical Society of Japan

See Also

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Sasaki, Wataru, Kinoshita, Joji (1968) Piezoresistance and Magnetic Susceptibility in Heavily Dopedn-Type Silicon. Journal of the Physical Society of Japan, 25 (6). 1622-1629 doi:10.1143/jpsj.25.1622
Furukawa, Yoshitaka (1961) Electrical Properties of Heavily Dopedn-Type Germanium. Journal of the Physical Society of Japan, 16 (4). 687-694 doi:10.1143/jpsj.16.687
Inoue, Masasi, Ikeda, Mitsusuke (1965) Piezo-Hall Effect in p-Type Germanium. Journal of the Physical Society of Japan, 20 (8). 1542-1543 doi:10.1143/jpsj.20.1542
Furukawa, Yoshitaka (1963) Magnetoresistance of Heavily Dopedn- andp-Type Germanium at 4.2°K. Journal of the Physical Society of Japan, 18 (10). 1374-1382 doi:10.1143/jpsj.18.1374
Pollak, Michael (1958) Piezoresistance in Heavily Dopedn-Type Germanium. Physical Review, 111 (3). 798-802 doi:10.1103/physrev.111.798
Toyotomi, Seizo (1975) Far-Infrared Impurity Absorption in Highly Dopedn-Type Silicon. Journal of the Physical Society of Japan, 38 (1). 175-180 doi:10.1143/jpsj.38.175
Furukawa, Yoshitaka (1961) Impurity Effect upon Mobility in Heavily Doped Silicon. Journal of the Physical Society of Japan, 16 (3). 577 doi:10.1143/jpsj.16.577
Kinoshita, Joji, Yamanouchi, Chikako, Yoshihiro, Kazuo (1974) Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress. Journal of the Physical Society of Japan, 36 (5). 1493 doi:10.1143/jpsj.36.1493
Ohmura, Yamichi (1992) Numerical Study of the Piezoresistance Effect in p-Type Si. Journal of the Physical Society of Japan, 61 (6). 2159 doi:10.1143/jpsj.61.2159
Sasaki, Wataru, Maekawa, Shigeru, Kinoshita, Joji (1967) Magnetic Anomaly in the Metallic Impurity Conduction. Journal of the Physical Society of Japan, 22 (3). 928 doi:10.1143/jpsj.22.928
Maekawa, Shigeru, Kinoshita, Nobumori (1964) Electron Spin Relaxation Time of Heavily P31Doped Silicon. Journal of the Physical Society of Japan, 19 (11). 2240-2241 doi:10.1143/jpsj.19.2240
 
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