Reference Type | Journal (article/letter/editorial) |
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Title | X-Ray Scattering Study of Phonon Amplification inn-GaAs: Plasma Effect |
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Journal | Journal of the Physical Society of Japan |
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Authors | Kagoshima, Seiichi | Author |
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Ishiguro, Takehiko | Author |
Year | 1976 (March 15) | Volume | 40 |
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Issue | 3 |
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Publisher | Physical Society of Japan |
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DOI | doi:10.1143/jpsj.40.784Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 11192544 | Long-form Identifier | mindat:1:5:11192544:9 |
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GUID | 0 |
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Full Reference | Kagoshima, Seiichi, Ishiguro, Takehiko (1976) X-Ray Scattering Study of Phonon Amplification inn-GaAs: Plasma Effect. Journal of the Physical Society of Japan, 40 (3). 784-791 doi:10.1143/jpsj.40.784 |
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Plain Text | Kagoshima, Seiichi, Ishiguro, Takehiko (1976) X-Ray Scattering Study of Phonon Amplification inn-GaAs: Plasma Effect. Journal of the Physical Society of Japan, 40 (3). 784-791 doi:10.1143/jpsj.40.784 |
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In | (1976, March) Journal of the Physical Society of Japan Vol. 40 (3) Physical Society of Japan |
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