Okamoto, Hirosi (1997) Ground State Properties in a Model of Quasi-Two-Dimensional Semiconductor. Journal of the Physical Society of Japan, 66 (7). 2068-2074 doi:10.1143/jpsj.66.2068
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ground State Properties in a Model of Quasi-Two-Dimensional Semiconductor | ||
Journal | Journal of the Physical Society of Japan | ||
Authors | Okamoto, Hirosi | Author | |
Year | 1997 (July 15) | Volume | 66 |
Issue | 7 | ||
Publisher | Physical Society of Japan | ||
DOI | doi:10.1143/jpsj.66.2068Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 11207260 | Long-form Identifier | mindat:1:5:11207260:9 |
GUID | 0 | ||
Full Reference | Okamoto, Hirosi (1997) Ground State Properties in a Model of Quasi-Two-Dimensional Semiconductor. Journal of the Physical Society of Japan, 66 (7). 2068-2074 doi:10.1143/jpsj.66.2068 | ||
Plain Text | Okamoto, Hirosi (1997) Ground State Properties in a Model of Quasi-Two-Dimensional Semiconductor. Journal of the Physical Society of Japan, 66 (7). 2068-2074 doi:10.1143/jpsj.66.2068 | ||
In | (1997, July) Journal of the Physical Society of Japan Vol. 66 (7) Physical Society of Japan |
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