Kasuya, Tadao (1999) Physical Mechanisms in Electron Doped HighTcSystems. Journal of the Physical Society of Japan, 68 (3). 930-934 doi:10.1143/jpsj.68.930
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Physical Mechanisms in Electron Doped HighTcSystems | ||
Journal | Journal of the Physical Society of Japan | ||
Authors | Kasuya, Tadao | Author | |
Year | 1999 (March 15) | Volume | 68 |
Issue | 3 | ||
Publisher | Physical Society of Japan | ||
DOI | doi:10.1143/jpsj.68.930Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 11208511 | Long-form Identifier | mindat:1:5:11208511:1 |
GUID | 0 | ||
Full Reference | Kasuya, Tadao (1999) Physical Mechanisms in Electron Doped HighTcSystems. Journal of the Physical Society of Japan, 68 (3). 930-934 doi:10.1143/jpsj.68.930 | ||
Plain Text | Kasuya, Tadao (1999) Physical Mechanisms in Electron Doped HighTcSystems. Journal of the Physical Society of Japan, 68 (3). 930-934 doi:10.1143/jpsj.68.930 | ||
In | (1999, March) Journal of the Physical Society of Japan Vol. 68 (3) Physical Society of Japan |
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