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dos Santos, Cláudia Lange, Piquini, Paulo, Magri, Rita (2019) Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires. The European Physical Journal B, 92 (9). doi:10.1140/epjb/e2019-100288-y

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Reference TypeJournal (article/letter/editorial)
TitleBand folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires
JournalThe European Physical Journal B
Authorsdos Santos, Cláudia LangeAuthor
Piquini, PauloAuthor
Magri, RitaAuthor
Year2019 (September)Volume92
Issue9
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1140/epjb/e2019-100288-ySearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID11286445Long-form Identifiermindat:1:5:11286445:7
GUID0
Full Referencedos Santos, Cláudia Lange, Piquini, Paulo, Magri, Rita (2019) Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires. The European Physical Journal B, 92 (9). doi:10.1140/epjb/e2019-100288-y
Plain Textdos Santos, Cláudia Lange, Piquini, Paulo, Magri, Rita (2019) Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires. The European Physical Journal B, 92 (9). doi:10.1140/epjb/e2019-100288-y
In(2019, September) The European Physical Journal B Vol. 92 (9) Springer Science and Business Media LLC

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