Palosz, B., Stel'makh, S., Gierlotka, S. (1995) Refinement of polycrystalline disordered cubic silicon carbide by structure modeling and X-ray diffraction simulation. Zeitschrift für Kristallographie - Crystalline Materials, 210 (10) 731 doi:10.1524/zkri.1995.210.10.731
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Refinement of polycrystalline disordered cubic silicon carbide by structure modeling and X-ray diffraction simulation | ||
| Journal | Zeitschrift für Kristallographie - Crystalline Materials | ||
| Authors | Palosz, B. | Author | |
| Stel'makh, S. | Author | ||
| Gierlotka, S. | Author | ||
| Year | 1995 (January 1) | Volume | 210 |
| Issue | 10 | ||
| Publisher | Walter de Gruyter GmbH | ||
| DOI | doi:10.1524/zkri.1995.210.10.731Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 114530 | Long-form Identifier | mindat:1:5:114530:8 |
| GUID | 0 | ||
| Full Reference | Palosz, B., Stel'makh, S., Gierlotka, S. (1995) Refinement of polycrystalline disordered cubic silicon carbide by structure modeling and X-ray diffraction simulation. Zeitschrift für Kristallographie - Crystalline Materials, 210 (10) 731 doi:10.1524/zkri.1995.210.10.731 | ||
| Plain Text | Palosz, B., Stel'makh, S., Gierlotka, S. (1995) Refinement of polycrystalline disordered cubic silicon carbide by structure modeling and X-ray diffraction simulation. Zeitschrift für Kristallographie - Crystalline Materials, 210 (10) 731 doi:10.1524/zkri.1995.210.10.731 | ||
| In | (1995, January) Zeitschrift für Kristallographie - Crystalline Materials Vol. 210 (10) Walter de Gruyter GmbH | ||
| Abstract/Notes | AbstractDisordering in SiC is analyzed both theoretically and experimentally. Classification of the stacking faults into (i) intrinsic, (ii) twin-like and (iii) extrinsic faults is proposed. This classification correlates well with distinct diffraction effects, characteristic for specific faults. Based on proposed classification, the disordering in SiC | ||
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