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Qi, Yanfei, Shen, Zongjie, Zhao, Chun, Zhao, Ce Zhou (2020) Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device. Journal of Alloys and Compounds, 822. 153603pp. doi:10.1016/j.jallcom.2019.153603

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Reference TypeJournal (article/letter/editorial)
TitleEffect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device
JournalJournal of Alloys and Compounds
AuthorsQi, YanfeiAuthor
Shen, ZongjieAuthor
Zhao, ChunAuthor
Zhao, Ce ZhouAuthor
Year2020 (May)Volume822
PublisherElsevier BV
DOIdoi:10.1016/j.jallcom.2019.153603Search in ResearchGate
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Mindat Ref. ID11929069Long-form Identifiermindat:1:5:11929069:3
GUID0
Full ReferenceQi, Yanfei, Shen, Zongjie, Zhao, Chun, Zhao, Ce Zhou (2020) Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device. Journal of Alloys and Compounds, 822. 153603pp. doi:10.1016/j.jallcom.2019.153603
Plain TextQi, Yanfei, Shen, Zongjie, Zhao, Chun, Zhao, Ce Zhou (2020) Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device. Journal of Alloys and Compounds, 822. 153603pp. doi:10.1016/j.jallcom.2019.153603
In(n.d.) Journal of Alloys and Compounds Vol. 822. Elsevier BV

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