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Song, Jie, Guo, Yan Qing, Song, Chao, Wang, Xiang (2012) Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD. Key Engineering Materials, 531. 392-395 doi:10.4028/www.scientific.net/kem.531-532.392

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD
JournalKey Engineering Materials
AuthorsSong, JieAuthor
Guo, Yan QingAuthor
Song, ChaoAuthor
Wang, XiangAuthor
Year2012 (December)Volume531
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/kem.531-532.392Search in ResearchGate
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Mindat Ref. ID12014672Long-form Identifiermindat:1:5:12014672:9
GUID0
Full ReferenceSong, Jie, Guo, Yan Qing, Song, Chao, Wang, Xiang (2012) Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD. Key Engineering Materials, 531. 392-395 doi:10.4028/www.scientific.net/kem.531-532.392
Plain TextSong, Jie, Guo, Yan Qing, Song, Chao, Wang, Xiang (2012) Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD. Key Engineering Materials, 531. 392-395 doi:10.4028/www.scientific.net/kem.531-532.392
In(n.d.) Key Engineering Materials Vol. 531. Trans Tech Publications, Ltd.


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