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Tang, Yi Dan, Liu, Xin Yu, Li, Cheng Zhan, Bai, Yun, Chen, Hong, Yang, Cheng Yue (2020) High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes. Materials Science Forum, 1004. 1004-1009 doi:10.4028/www.scientific.net/msf.1004.1004

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Reference TypeJournal (article/letter/editorial)
TitleHigh-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes
JournalMaterials Science Forum
AuthorsTang, Yi DanAuthor
Liu, Xin YuAuthor
Li, Cheng ZhanAuthor
Bai, YunAuthor
Chen, HongAuthor
Yang, Cheng YueAuthor
Year2020 (July)Volume1004
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.1004.1004Search in ResearchGate
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Mindat Ref. ID13233105Long-form Identifiermindat:1:5:13233105:2
GUID0
Full ReferenceTang, Yi Dan, Liu, Xin Yu, Li, Cheng Zhan, Bai, Yun, Chen, Hong, Yang, Cheng Yue (2020) High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes. Materials Science Forum, 1004. 1004-1009 doi:10.4028/www.scientific.net/msf.1004.1004
Plain TextTang, Yi Dan, Liu, Xin Yu, Li, Cheng Zhan, Bai, Yun, Chen, Hong, Yang, Cheng Yue (2020) High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes. Materials Science Forum, 1004. 1004-1009 doi:10.4028/www.scientific.net/msf.1004.1004
In(2020) Materials Science Forum Vol. 1004. Trans Tech Publications, Ltd.

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