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Olikh, O., Kostylyov, V., Vlasiuk, V., Korkishko, R., Olikh, Ya., Chupryna, R. (2021) Features of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading. Journal of Applied Physics, 130 (23) 235703pp. doi:10.1063/5.0073135

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Reference TypeJournal (article/letter/editorial)
TitleFeatures of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading
JournalJournal of Applied Physics
AuthorsOlikh, O.Author
Kostylyov, V.Author
Vlasiuk, V.Author
Korkishko, R.Author
Olikh, Ya.Author
Chupryna, R.Author
Year2021 (December 21)Volume130
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/5.0073135Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID13550147Long-form Identifiermindat:1:5:13550147:6
GUID0
Full ReferenceOlikh, O., Kostylyov, V., Vlasiuk, V., Korkishko, R., Olikh, Ya., Chupryna, R. (2021) Features of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading. Journal of Applied Physics, 130 (23) 235703pp. doi:10.1063/5.0073135
Plain TextOlikh, O., Kostylyov, V., Vlasiuk, V., Korkishko, R., Olikh, Ya., Chupryna, R. (2021) Features of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading. Journal of Applied Physics, 130 (23) 235703pp. doi:10.1063/5.0073135
In(2021, December) Journal of Applied Physics Vol. 130 (23) AIP Publishing

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Olikh, O. Ya., Gorb, A. M., Chupryna, R. G., Pristay-Fenenkov, O. V. (2018) Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures. Journal of Applied Physics, 123 (16). 161573pp. doi:10.1063/1.5001123
Olikh, O. Ya., Voytenko, K. V., Burbelo, R. M. (2015) Ultrasound influence on I–V–T characteristics of silicon Schottky barrier structure. Journal of Applied Physics, 117 (4). 44505pp. doi:10.1063/1.4906844
Gontaruk, A. N., Korbutyak, D. V., Korbut, E. V., Machulin, V. F., Olikh, Ya. M., Tartachnik, V. P. (1998) Ultrasound-stimulated degradation-relaxation effects in gallium phosphide light-emitting p-n structures. Technical Physics Letters, 24. 608-610 doi:10.1134/1.1262215
Olikh, O. Ya., Ostrovskii, I. V. (2002) Ultrasound-stimulated increase in the electron diffusion length in p-Si crystals. Physics of the Solid State, 44. 1249-1253 doi:10.1134/1.1494617
Olikh, Ya. M., Tymochko, M. D. (2011) In situ observation of the relaxation of conductivity in Îł-irradiated n-type silicon under the action of ultrasound pulses. Technical Physics Letters, 37. 37-40 doi:10.1134/s106378501101007x
Lepikh, Ya I, Smyntyna, V A, Snigur, P O, Olikh, Ya M (2007) Germanium coordination compounds—structure, properties, possible applications. Journal of Physics: Conference Series, 76. 12050pp. doi:10.1088/1742-6596/76/1/012050
Olikh, O. Ya. (2015) Review and test of methods for determination of the Schottky diode parameters. Journal of Applied Physics, 118 (2). 24502pp. doi:10.1063/1.4926420
Geerligs, L. J., Macdonald, Daniel (2004) Dynamics of light-induced FeB pair dissociation in crystalline silicon. Applied Physics Letters, 85 (22). 5227-5229 doi:10.1063/1.1823587
Sachenko, A V, Shkrebtii, A I, Korkishko, R M, Kostylyov, V P, Kulish, M R, Sokolovskyi, I O, Evstigneev, M (2015) Analysis of the attainable efficiency of a direct-bandgap betavoltaic element. Journal of Physics D: Applied Physics, 48. 455101pp. doi:10.1088/0022-3727/48/45/455101
Olikh, Ya. M., Tymochko, M. D., Dolgolenko, A. P. (2006) Acoustic-wave-stimulated transformations of radiation defects in Îł-irradiated n-type silicon crystals. Technical Physics Letters, 32. 586-589 doi:10.1134/s106378500607011x
Olikh, O. Ya., Pinchuk, T. N. (2006) Acoustic wave corrected current-voltage characteristics of GaAs-based structures with Schottky contacts. Technical Physics Letters, 32. 517-519 doi:10.1134/s1063785006060204
 
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