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(2006) Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems. Journal de Physique IV (Proceedings), 132. 205-209 doi:10.1051/jp4:2006132039

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Reference TypeJournal (article/letter/editorial)
TitleThermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems
JournalJournal de Physique IV (Proceedings)
Year2006 (March)Volume132
PublisherEDP Sciences
DOIdoi:10.1051/jp4:2006132039Search in ResearchGate
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Mindat Ref. ID13644014Long-form Identifiermindat:1:5:13644014:9
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Full Reference(2006) Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems. Journal de Physique IV (Proceedings), 132. 205-209 doi:10.1051/jp4:2006132039
Plain Text(2006) Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems. Journal de Physique IV (Proceedings), 132. 205-209 doi:10.1051/jp4:2006132039
In(2006) Le Journal de Physique IV Vol. 132. EDP Sciences

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Liu, W. C., Pan, H. J., Cheng, S. Y., Wang, W. C., Chen, J. Y., Feng, S. C., Yu, K. H. (1999) MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998145
 
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