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Jing, Jiangping, Chen, Zhuoyuan, Feng, Chang, Sun, Mengmeng, Hou, Jian (2021) Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection. Journal of Alloys and Compounds, 851. 156820pp. doi:10.1016/j.jallcom.2020.156820

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Reference TypeJournal (article/letter/editorial)
TitleTransforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection
JournalJournal of Alloys and Compounds
AuthorsJing, JiangpingAuthor
Chen, ZhuoyuanAuthor
Feng, ChangAuthor
Sun, MengmengAuthor
Hou, JianAuthor
Year2021 (January)Volume851
PublisherElsevier BV
DOIdoi:10.1016/j.jallcom.2020.156820Search in ResearchGate
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Mindat Ref. ID14053438Long-form Identifiermindat:1:5:14053438:4
GUID0
Full ReferenceJing, Jiangping, Chen, Zhuoyuan, Feng, Chang, Sun, Mengmeng, Hou, Jian (2021) Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection. Journal of Alloys and Compounds, 851. 156820pp. doi:10.1016/j.jallcom.2020.156820
Plain TextJing, Jiangping, Chen, Zhuoyuan, Feng, Chang, Sun, Mengmeng, Hou, Jian (2021) Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection. Journal of Alloys and Compounds, 851. 156820pp. doi:10.1016/j.jallcom.2020.156820
In(2021) Journal of Alloys and Compounds Vol. 851. Elsevier BV

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