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Ruckman, M. W., del Giudice, M., Weaver, J. H. (1985) Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110) Physical Review B, 32 (2) 1077-1084 doi:10.1103/physrevb.32.1077

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110)
JournalPhysical Review B
AuthorsRuckman, M. W.Author
del Giudice, M.Author
Weaver, J. H.Author
Year1985 (July 15)Volume32
Issue2
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.32.1077Search in ResearchGate
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Mindat Ref. ID14090943Long-form Identifiermindat:1:5:14090943:4
GUID0
Full ReferenceRuckman, M. W., del Giudice, M., Weaver, J. H. (1985) Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110) Physical Review B, 32 (2) 1077-1084 doi:10.1103/physrevb.32.1077
Plain TextRuckman, M. W., del Giudice, M., Weaver, J. H. (1985) Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110) Physical Review B, 32 (2) 1077-1084 doi:10.1103/physrevb.32.1077
In(1985, July) Physical Review B Vol. 32 (2) American Physical Society (APS)

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del Giudice, M., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1985) Cluster formation and atomic intermixing at the reactive V/Ge(111) interface. Physical Review B, 32 (8) 5149-5155 doi:10.1103/physrevb.32.5149
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Photoemission study of the development of the Ti/GaAs(110) interface. Physical Review B, 33 (4) 2191-2197 doi:10.1103/physrevb.33.2191
del Giudice, M., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation. Physical Review B, 35 (12) 6213-6221 doi:10.1103/physrevb.35.6213
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Comparative study of the formation of Cr/Ge and Ge/Cr thin-film interfaces. Physical Review B, 33 (12) 8039-8047 doi:10.1103/physrevb.33.8039
Butera, R. A., del Giudice, M., Weaver, J. H. (1986) Quantitative model of reactive metal-semiconductor interface growth using high-resolution photoemission results. Physical Review B, 33 (8) 5435-5449 doi:10.1103/physrevb.33.5435
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Soft-x-ray photoemission study of Cr-Ge intermixing on crystalline and amorphous Ge surfaces. Physical Review B, 34 (6) 4010-4016 doi:10.1103/physrevb.34.4010
Butera, R. A., del Giudice, M., Weaver, J. H. (1987) Temperature-dependent interface evolution: Modeling of core-level photoemission results for V/Ge(111) Physical Review B, 36 (9) 4754-4760 doi:10.1103/physrevb.36.4754
Weaver, J. H., Grioni, M., Joyce, J. J., del Giudice, M. (1985) Reactions at a rare-earth–GaAs interface: Ce/GaAs(110) Physical Review B, 31 (8) 5290-5296 doi:10.1103/physrevb.31.5290
Grioni, M., Joyce, J., del Giudice, M., O'Neill, D. G., Weaver, J. H. (1984) Modeling a heterogeneous metal/semiconductor interface: Ce on Si(111) Physical Review B, 30 (12) 7370-7373 doi:10.1103/physrevb.30.7370
Ruckman, M. W., Joyce, J. J., Weaver, J. H. (1986) Interdiffusion and reaction at the Fe/GaAs(110) interface. Physical Review B, 33 (10) 7029-7035 doi:10.1103/physrevb.33.7029
del Giudice, M., Joyce, J. J., Weaver, J. H. (1987) Core-level binding-energy shifts, thermodynamic predictions, and morphologies for metal-Si and metal-Ge interfaces. Physical Review B, 36 (9) 4761-4768 doi:10.1103/physrevb.36.4761
 
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