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Salib, E. H., Duff, K. J. (1986) Group-theoretical study of triple acceptors in group-IV semiconductors under uniaxial stress. Physical Review B, 33 (2) 1275-1291 doi:10.1103/physrevb.33.1275

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Reference TypeJournal (article/letter/editorial)
TitleGroup-theoretical study of triple acceptors in group-IV semiconductors under uniaxial stress
JournalPhysical Review B
AuthorsSalib, E. H.Author
Duff, K. J.Author
Year1986 (January 15)Volume33
Issue2
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.33.1275Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14092259Long-form Identifiermindat:1:5:14092259:4
GUID0
Full ReferenceSalib, E. H., Duff, K. J. (1986) Group-theoretical study of triple acceptors in group-IV semiconductors under uniaxial stress. Physical Review B, 33 (2) 1275-1291 doi:10.1103/physrevb.33.1275
Plain TextSalib, E. H., Duff, K. J. (1986) Group-theoretical study of triple acceptors in group-IV semiconductors under uniaxial stress. Physical Review B, 33 (2) 1275-1291 doi:10.1103/physrevb.33.1275
In(1986, January) Physical Review B Vol. 33 (2) American Physical Society (APS)

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Kartheuser, E., Rodriguez, Sergio (1973) Group-Theoretical Study of Double Acceptors in Semiconductors under Uniaxial Stress. Physical Review B, 8 (4) 1556-1570 doi:10.1103/physrevb.8.1556
Duff, K. J. (1993) Theory of the piezo-Zeeman effect for shallow acceptors in group-IV semiconductors. Physical Review B, 48 (8) 5127-5147 doi:10.1103/physrevb.48.5127
Jenkins, David W., Ren, Shang Yuan, Dow, John D. (1989) Dependence on uniaxial stress of deep levels in III-V compound and group-IV elemental semiconductors. Physical Review B, 39 (11) 7881-7894 doi:10.1103/physrevb.39.7881
Mistura, L. (1986) Scaling theory of surface tension near a critical point. Physical Review A, 33 (2). 1275-1278 doi:10.1103/physreva.33.1275
Bhattacharjee, Anadi K., Rodriguez, Sergio (1972) Group-Theoretical Study of the Zeeman Effect of Acceptors in Silicon and Germanium. Physical Review B, 6 (10) 3836-3856 doi:10.1103/physrevb.6.3836
Karasyuk, V. A., Thewalt, M. L. W., An, S., Lightowlers, E. C. (1997) Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon:  Uniaxial stress. Physical Review B, 56 (24) 15672-15684 doi:10.1103/physrevb.56.15672
Chang, Yia-Chung, Chu, H. Y., Chung, S. G. (1986) Electron-hole liquid in InAs quantum wells under uniaxial stress. Physical Review B, 33 (10) 7364-7367 doi:10.1103/physrevb.33.7364
Warren, G. L., Evenson, W. E. (1975) Theory of melting in the group-IV semiconductors. Physical Review B, 11 (8) 2979-2989 doi:10.1103/physrevb.11.2979
Hünermann, M., Richter, W., Saalmüller, J., Anastassakis, E. (1986) Phonon and plasmon deformation potentials of GaAs: Far-infrared study under uniaxial stress. Physical Review B, 34 (8) 5381-5389 doi:10.1103/physrevb.34.5381
Freeman, R. M., Beck, C., Haas, F., Morsad, A., Cindro, N. (1986) C12+17O reaction. Physical Review C, 33 (4). 1275-1279 doi:10.1103/physrevc.33.1275
Landau, D. P., Swendsen, R. H. (1986) Monte Carlo renormalization-group study of tricritical behavior in two dimensions. Physical Review B, 33 (11) 7700-7707 doi:10.1103/physrevb.33.7700
 
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