Hirsch, M. J., Holcomb, D. F. (1986) NMR Study of Si:As and Si:P near the metal-insulator transition. Physical Review B, 33 (4) 2520-2529 doi:10.1103/physrevb.33.2520
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | NMR Study of Si:As and Si:P near the metal-insulator transition | ||
Journal | Physical Review B | ||
Authors | Hirsch, M. J. | Author | |
Holcomb, D. F. | Author | ||
Year | 1986 (February 15) | Volume | 33 |
Issue | 4 | ||
Publisher | American Physical Society (APS) | ||
DOI | doi:10.1103/physrevb.33.2520Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 14092495 | Long-form Identifier | mindat:1:5:14092495:6 |
GUID | 0 | ||
Full Reference | Hirsch, M. J., Holcomb, D. F. (1986) NMR Study of Si:As and Si:P near the metal-insulator transition. Physical Review B, 33 (4) 2520-2529 doi:10.1103/physrevb.33.2520 | ||
Plain Text | Hirsch, M. J., Holcomb, D. F. (1986) NMR Study of Si:As and Si:P near the metal-insulator transition. Physical Review B, 33 (4) 2520-2529 doi:10.1103/physrevb.33.2520 | ||
In | (1986, February) Physical Review B Vol. 33 (4) American Physical Society (APS) |
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