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Omling, P., Weber, E. R., Samuelson, L. (1986) Antisite-related defects in plastically deformed GaAs. Physical Review B, 33 (8) 5880-5883 doi:10.1103/physrevb.33.5880

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Reference TypeJournal (article/letter/editorial)
TitleAntisite-related defects in plastically deformed GaAs
JournalPhysical Review B
AuthorsOmling, P.Author
Weber, E. R.Author
Samuelson, L.Author
Year1986 (April 15)Volume33
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.33.5880Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14093028Long-form Identifiermindat:1:5:14093028:5
GUID0
Full ReferenceOmling, P., Weber, E. R., Samuelson, L. (1986) Antisite-related defects in plastically deformed GaAs. Physical Review B, 33 (8) 5880-5883 doi:10.1103/physrevb.33.5880
Plain TextOmling, P., Weber, E. R., Samuelson, L. (1986) Antisite-related defects in plastically deformed GaAs. Physical Review B, 33 (8) 5880-5883 doi:10.1103/physrevb.33.5880
In(1986, April) Physical Review B Vol. 33 (8) American Physical Society (APS)

See Also

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Omling, P., Weber, E. R., Montelius, L., Alexander, H., Michel, J. (1985) Electrical properties of dislocations and point defects in plastically deformed silicon. Physical Review B, 32 (10) 6571-6581 doi:10.1103/physrevb.32.6571
Samuelson, L., Omling, P. (1986) Properties of theEL2 level inGaAs1−xPx. Physical Review B, 34 (8) 5603-5609 doi:10.1103/physrevb.34.5603
Omling, P., Silverberg, P., Samuelson, L. (1988) Identification of a second energy level ofEL2inn-type GaAs. Physical Review B, 38 (5) 3606-3609 doi:10.1103/physrevb.38.3606
Hoinkis, Mark, Weber, Eicke R. (1989) Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs. Physical Review B, 40 (6) 3872-3877 doi:10.1103/physrevb.40.3872
Omling, P., Samuelson, L., Grimmeiss, H. G. (1984) Metastable state of EL2 in theGaAs1−xPxalloy system. Physical Review B, 29 (8) 4534-4539 doi:10.1103/physrevb.29.4534
Prasad, A., Stallinga, P., Liu, X., Weber, E. R. (1998) Origin of the magnetic circular dichroism of absorption of the arsenic antisite in GaAs andAlxGa1−xAs. Physical Review B, 57 (8) doi:10.1103/physrevb.57.r4214
Omling, P., Yang, B. H., Samuelson, L., Yakimova, R., Fornell, J.-O., Ledebo, L. (1991) Electronic properties of theSbGaheteroantisite defect in GaAs:Sb. Physical Review B, 44 (24) 13398-13403 doi:10.1103/physrevb.44.13398
Kuisma, S., Saarinen, K., Hautojärvi, P., Corbel, C. (1996) Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs. Physical Review B, 53 (12) doi:10.1103/physrevb.53.r7588
Kunkel, H. P., Roshko, R. M., Williams, Gwyn (1988) Field-dependent susceptibility of a paramagnet. Physical Review B, 37 (10) 5880-5883 doi:10.1103/physrevb.37.5880
Kisielowski, C., Weber, E. R. (1991) Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations ofp- andn-doped silicon. Physical Review B, 44 (4) 1600-1612 doi:10.1103/physrevb.44.1600
Dreszer, P., Chen, W. M., Seendripu, K., Wolk, J. A., Walukiewicz, W., Liang, B. W., Tu, C. W., Weber, E. R. (1993) Phosphorus antisite defects in low-temperature InP. Physical Review B, 47 (7) 4111-4114 doi:10.1103/physrevb.47.4111
 
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