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Bringans, R. D., Uhrberg, R. I. G., Olmstead, M. A., Bachrach, R. Z. (1986) Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals. Physical Review B, 34 (10) 7447-7450 doi:10.1103/physrevb.34.7447

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Reference TypeJournal (article/letter/editorial)
TitleSurface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals
JournalPhysical Review B
AuthorsBringans, R. D.Author
Uhrberg, R. I. G.Author
Olmstead, M. A.Author
Bachrach, R. Z.Author
Year1986 (November 15)Volume34
Issue10
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.34.7447Search in ResearchGate
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Mindat Ref. ID14093341Long-form Identifiermindat:1:5:14093341:5
GUID0
Full ReferenceBringans, R. D., Uhrberg, R. I. G., Olmstead, M. A., Bachrach, R. Z. (1986) Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals. Physical Review B, 34 (10) 7447-7450 doi:10.1103/physrevb.34.7447
Plain TextBringans, R. D., Uhrberg, R. I. G., Olmstead, M. A., Bachrach, R. Z. (1986) Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals. Physical Review B, 34 (10) 7447-7450 doi:10.1103/physrevb.34.7447
In(1986, November) Physical Review B Vol. 34 (10) American Physical Society (APS)

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Olmstead, Marjorie A., Bringans, R. D., Uhrberg, R. I. G., Bachrach, R. Z. (1986) Arsenic overlayer on Si(111): Removal of surface reconstruction. Physical Review B, 34 (8) 6041-6044 doi:10.1103/physrevb.34.6041
Bringans, R. D., Olmstead, M. A., Uhrberg, R. I. G., Bachrach, R. Z. (1987) Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As. Physical Review B, 36 (18) 9569-9580 doi:10.1103/physrevb.36.9569
Olmstead, Marjorie A., Uhrberg, R. I. G., Bringans, R. D., Bachrach, R. Z. (1987) Photoemission study of bonding at theCaF2-on-Si(111) interface. Physical Review B, 35 (14) 7526-7532 doi:10.1103/physrevb.35.7526
Uhrberg, R. I. G., Bringans, R. D., Bachrach, R. Z., Northrup, John E. (1986) Symmetric arsenic dimers on the Si(100) surface. Physical Review Letters, 56 (5). 520-523 doi:10.1103/physrevlett.56.520
Bringans, R. D., Uhrberg, R. I. G., Bachrach, R. Z. (1986) Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1. Physical Review B, 34 (4) 2373-2380 doi:10.1103/physrevb.34.2373
Uhrberg, R. I. G., Bringans, R. D., Olmstead, Marjorie A., Bachrach, R. Z., Northrup, John E. (1987) Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface. Physical Review B, 35 (8) 3945-3951 doi:10.1103/physrevb.35.3945
Bringans, R. D., Olmstead, Marjorie A., Uhrberg, R. I. G., Bachrach, R. Z. (1987) Formation of the interface between GaAs and Si: Implications for GaAs‐on‐Si heteroepitaxy. Applied Physics Letters, 51 (7). 523-525 doi:10.1063/1.98386
Northrup, John E., Bringans, R. D., Uhrberg, R. I. G., Olmstead, Marjorie A., Bachrach, R. Z. (1988) Electronic and Atomic Structure of GaAs Epitaxial Overlays on Si(111). Physical Review Letters, 61 (26). 2957-2960 doi:10.1103/physrevlett.61.2957
Bringans, R. D., Olmstead, Marjorie A. (1989) Bonding of Se and ZnSe to the Si(100) surface. Physical Review B, 39 (17) 12985-12988 doi:10.1103/physrevb.39.12985
Johansson, L. S. O., Uhrberg, R. I. G., Mårtensson, P., Hansson, G. V. (1990) Surface-state band structure of the Si(100)2×1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces. Physical Review B, 42 (2) 1305-1315 doi:10.1103/physrevb.42.1305
Johansson, L. S. O., Uhrberg, R. I. G., Hansson, G. V. (1988) Symmetry properties and band structure of surface states on the single-domain, hydrogen-chemisorbed Si(100) 2 × 1:H surface. Physical Review B, 38 (18) 13490-13493 doi:10.1103/physrevb.38.13490
 
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