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Xu, F., Hill, D. M., Lin, Zhangda, Anderson, Steven G., Shapira, Yoram, Weaver, J. H. (1988) Temperature-dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces. Physical Review B, 37 (17) 10295-10300 doi:10.1103/physrevb.37.10295

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces
JournalPhysical Review B
AuthorsXu, F.Author
Hill, D. M.Author
Lin, ZhangdaAuthor
Anderson, Steven G.Author
Shapira, YoramAuthor
Weaver, J. H.Author
Year1988 (June 15)Volume37
Issue17
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.37.10295Search in ResearchGate
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Mindat Ref. ID14098462Long-form Identifiermindat:1:5:14098462:2
GUID0
Full ReferenceXu, F., Hill, D. M., Lin, Zhangda, Anderson, Steven G., Shapira, Yoram, Weaver, J. H. (1988) Temperature-dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces. Physical Review B, 37 (17) 10295-10300 doi:10.1103/physrevb.37.10295
Plain TextXu, F., Hill, D. M., Lin, Zhangda, Anderson, Steven G., Shapira, Yoram, Weaver, J. H. (1988) Temperature-dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces. Physical Review B, 37 (17) 10295-10300 doi:10.1103/physrevb.37.10295
In(1988, June) Physical Review B Vol. 37 (17) American Physical Society (APS)

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Xu, F., Lin, Zhangda, Hill, D. M., Weaver, J. H. (1987) Temperature-dependent reaction and buried-interface movement for Ti/GaAs(100) and Cr/GaAs(100) Physical Review B, 35 (17) 9353-9356 doi:10.1103/physrevb.35.9353
Xu, F., Lin, Zhangda, Hill, D. M., Weaver, J. H. (1987) Temperature-dependent interface evolution for Ti/GaAs(100) and Cr/GaAs(100) Physical Review B, 36 (12) 6624-6630 doi:10.1103/physrevb.36.6624
Xu, F., Shapira, Yoram, Hill, D. M., Weaver, J. H. (1987) Atom profiles of interfaces with polar-angle-dependent photoemission: Au/GaAs(100) Physical Review B, 35 (14) 7417-7422 doi:10.1103/physrevb.35.7417
Hill, D. M., Xu, F., Lin, Zhangda, Weaver, J. H. (1988) Atomic distributions across metal–III-V-compound-semiconductor interfaces. Physical Review B, 38 (3) 1893-1900 doi:10.1103/physrevb.38.1893
Vitomirov, I. M., Waddill, G. D., Aldao, C. M., Anderson, Steven G., Capasso, C., Weaver, J. H. (1989) Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces. Physical Review B, 40 (5) 3483-3486 doi:10.1103/physrevb.40.3483
Shapira, Yoram, Boscherini, F., Capasso, C., Xu, F., Hill, D. M., Weaver, and J. H. (1987) Au/InSb(110) interface profiles from synchrotron-radiation and polar-angle-dependent x-ray photoemission. Physical Review B, 36 (14) 7656-7659 doi:10.1103/physrevb.36.7656
Anderson, Steven G., Xu, F., Vos, M., Weaver, J. H., Cheng, H. (1989) Schottky-barrier formation and atomic mixing at Au/ZnSe(100) and Co/ZnSe(100) interfaces with Co and Au interlayers. Physical Review B, 39 (8) 5079-5090 doi:10.1103/physrevb.39.5079
Lin, Zhangda, Xu, F., Weaver, J. H. (1987) Surface segregation at metalndashIII-V-compound-semiconductor interfaces. Physical Review B, 36 (11) 5777-5783 doi:10.1103/physrevb.36.5777
Xu, F., Vos, M., Sullivan, J. P., Atanasoska, Lj., Anderson, Steven G., Weaver, J. H., Cheng, H. (1988) Band-gap discontinuities for Ge/ZnSe(100) and Si/ZnSe(100): A photoemission study. Physical Review B, 38 (11) 7832-7835 doi:10.1103/physrevb.38.7832
Anderson, Steven G., Aldao, C. M., Waddill, G. D., Vitomirov, I. M., Severtson, S. J., Weaver, J. H. (1989) Temperature-dependent Al/GaAs(110) interface formation and adatom energy references. Physical Review B, 40 (12) 8305-8312 doi:10.1103/physrevb.40.8305
Vos, M., Xu, F., Anderson, Steven G., Weaver, J. H., Cheng, H. (1989) Photoemission studies of interface chemistry and Schottky barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Au, Ce, and Al. Physical Review B, 39 (15) 10744-10752 doi:10.1103/physrevb.39.10744
 
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