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Jackson, W. B., Kakalios, J. (1988) Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon. Physical Review B, 37 (2) 1020-1023 doi:10.1103/physrevb.37.1020

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Reference TypeJournal (article/letter/editorial)
TitleEvidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon
JournalPhysical Review B
AuthorsJackson, W. B.Author
Kakalios, J.Author
Year1988 (January 15)Volume37
Issue2
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.37.1020Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14098577Long-form Identifiermindat:1:5:14098577:3
GUID0
Full ReferenceJackson, W. B., Kakalios, J. (1988) Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon. Physical Review B, 37 (2) 1020-1023 doi:10.1103/physrevb.37.1020
Plain TextJackson, W. B., Kakalios, J. (1988) Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon. Physical Review B, 37 (2) 1020-1023 doi:10.1103/physrevb.37.1020
In(1988, January) Physical Review B Vol. 37 (2) American Physical Society (APS)

See Also

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Stutzmann, M., Jackson, W. B., Tsai, C. C. (1986) Annealing of metastable defects in hydrogenated amorphous silicon. Physical Review B, 34 (1) 63-72 doi:10.1103/physrevb.34.63
Yoon, Jong-Hwan (1995) Pulsed-light-induced annealing of metastable defects in hydrogenated amorphous silicon. Physical Review B, 51 (15) 10221-10223 doi:10.1103/physrevb.51.10221
Stutzmann, M., Jackson, W. B., Tsai, C. C. (1985) Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Physical Review B, 32 (1) 23-47 doi:10.1103/physrevb.32.23
Jackson, W. B., Marshall, J. M., Moyer, M. D. (1989) Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon. Physical Review B, 39 (2) 1164-1179 doi:10.1103/physrevb.39.1164
Jackson, W. B. (1990) Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon. Physical Review B, 41 (2) 1059-1075 doi:10.1103/physrevb.41.1059
Fan, J., Kakalios, J. (1993) Light-induced changes of the 1/fnoise in hydrogenated amorphous silicon. Physical Review B, 47 (16) 10903-10906 doi:10.1103/physrevb.47.10903
Meaudre, R., Meaudre, M., Vignoli, S. (1994) Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term. Physical Review B, 49 (3) 1716-1719 doi:10.1103/physrevb.49.1716
Jackson, W. B., Moyer, M. D. (1987) Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. Physical Review B, 36 (11) 6217-6220 doi:10.1103/physrevb.36.6217
Nickel, N. H., Jackson, W. B., Johnson, N. M. (1993) Light-induced creation of metastable paramagnetic defects in hydrogenated polycrystalline silicon. Physical Review Letters, 71 (17). 2733-2736 doi:10.1103/physrevlett.71.2733
Lee, C., Ohlsen, W. D., Taylor, P. C. (1987) Metastable paramagnetism in hydrogenated amorphous silicon: Evidence for a new class of defects in tetrahedrally bonded amorphous semiconductors. Physical Review B, 36 (5) 2965-2968 doi:10.1103/physrevb.36.2965
Crandall, Richard S. (1987) Metastable defects in hydrogenated amorphous silicon. Physical Review B, 36 (5) 2645-2665 doi:10.1103/physrevb.36.2645
 
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