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Ji, G., Dobbelaere, W., Huang, D., Morkoç, H. (1989) Optical transitions involving unconfined energy states inInxGa1−xAs/GaAs multiple quantum wells. Physical Review B, 39 (5) 3216-3222 doi:10.1103/physrevb.39.3216

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Reference TypeJournal (article/letter/editorial)
TitleOptical transitions involving unconfined energy states inInxGa1−xAs/GaAs multiple quantum wells
JournalPhysical Review B
AuthorsJi, G.Author
Dobbelaere, W.Author
Huang, D.Author
Morkoç, H.Author
Year1989 (February 15)Volume39
Issue5
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.3216Search in ResearchGate
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Mindat Ref. ID14102702Long-form Identifiermindat:1:5:14102702:1
GUID0
Full ReferenceJi, G., Dobbelaere, W., Huang, D., Morkoç, H. (1989) Optical transitions involving unconfined energy states inInxGa1−xAs/GaAs multiple quantum wells. Physical Review B, 39 (5) 3216-3222 doi:10.1103/physrevb.39.3216
Plain TextJi, G., Dobbelaere, W., Huang, D., Morkoç, H. (1989) Optical transitions involving unconfined energy states inInxGa1−xAs/GaAs multiple quantum wells. Physical Review B, 39 (5) 3216-3222 doi:10.1103/physrevb.39.3216
In(1989, February) Physical Review B Vol. 39 (5) American Physical Society (APS)

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Cingolani, R., Stolz, W., Ploog, K. (1989) Electronic states and optical transitions in modulation-dopedn-typeGaxIn1−xAs/AlxIn1−xAs multiple quantum wells. Physical Review B, 40 (5) 2950-2955 doi:10.1103/physrevb.40.2950
Song, J. J., Yoon, Y. S., Fedotowsky, A., Kim, Y. B., Schulman, J. N., Tu, C. W., Huang, D., Morkoc, H. (1986) Barrier-width dependence of optical transitions involving unconfined energy states in GaAs-AlxGa1−xAs superlattices. Physical Review B, 34 (12) 8958-8962 doi:10.1103/physrevb.34.8958
Ji, G., Agarwala, S., Huang, D., Chyi, J., Morkoç, H. (1988) Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy. Physical Review B, 38 (15) 10571-10577 doi:10.1103/physrevb.38.10571
Wu, Ji- Wei (1989) Many-body optical-edge singularity in absorption spectra of GaAs/AlxGa1−xAs modulation-doped quantum wells. Physical Review B, 39 (11) 7992-7995 doi:10.1103/physrevb.39.7992
Huang, D., Chu, H. Y., Chang, Y. C., Houdré, R., Morkoç, H. (1988) Excitonic absorption in modulation-doped GaAs/AlxGa1−xAs quantum wells. Physical Review B, 38 (2) 1246-1250 doi:10.1103/physrevb.38.1246
Yu, P. W., Sanders, G. D., Reynolds, D. C., Bajaj, K. K., Litton, C. W., Klem, J., Huang, D., Morkoç, H. (1987) Determination of transition energies and oscillator strengths in GaAs-AlxGa1−xAs multiple quantum wells using photovoltage-induced photocurrent spectroscopy. Physical Review B, 35 (17) 9250-9258 doi:10.1103/physrevb.35.9250
Hou, H. Q., Staguhn, W., Takeyama, S., Miura, N., Segawa, Y., Aoyagi, Y., Namba, S. (1991) Diamagnetic shift inInxGa1−xAs/GaAs strained quantum wells. Physical Review B, 43 (5) 4152-4157 doi:10.1103/physrevb.43.4152
Fortin, E., Hua, B. Y., Roth, A. P. (1989) Electro-optical effects inInxGa1−xAs/GaAs strained-layer superlattices. Physical Review B, 39 (15) 10887-10891 doi:10.1103/physrevb.39.10887
Hou, H. Q., Segawa, Y., Aoyagi, Y., Namba, S., Zhou, J. M. (1990) Exciton binding energy inInxGa1−xAs/GaAs strained quantum wells. Physical Review B, 42 (2) 1284-1289 doi:10.1103/physrevb.42.1284
Zhou, P., Jiang, H. X., Bannwart, R., Solin, S. A., Bai, G. (1989) Excitonic transitions in GaAs-AlxGa1−xAs multiple quantum wells affected by interface roughness. Physical Review B, 40 (17) 11862-11867 doi:10.1103/physrevb.40.11862
Atanasov, R., Bassani, F., D’Andrea, A., Tomassini, N. (1994) Exciton properties and optical response inInxGa1−xAs/GaAs strained quantum wells. Physical Review B, 50 (19) 14381-14388 doi:10.1103/physrevb.50.14381
 
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