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Chen, Ting, Scott, J. F. (1989) Raman intensities near second-order transitions:RP5O14ferroelastics (whereRis a lanthanide) Physical Review B, 40 (13) 8978-8982 doi:10.1103/physrevb.40.8978

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Reference TypeJournal (article/letter/editorial)
TitleRaman intensities near second-order transitions:RP5O14ferroelastics (whereRis a lanthanide)
JournalPhysical Review B
AuthorsChen, TingAuthor
Scott, J. F.Author
Year1989 (November 1)Volume40
Issue13
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.40.8978Search in ResearchGate
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Mindat Ref. ID14103677Long-form Identifiermindat:1:5:14103677:1
GUID0
Full ReferenceChen, Ting, Scott, J. F. (1989) Raman intensities near second-order transitions:RP5O14ferroelastics (whereRis a lanthanide) Physical Review B, 40 (13) 8978-8982 doi:10.1103/physrevb.40.8978
Plain TextChen, Ting, Scott, J. F. (1989) Raman intensities near second-order transitions:RP5O14ferroelastics (whereRis a lanthanide) Physical Review B, 40 (13) 8978-8982 doi:10.1103/physrevb.40.8978
In(1989, November) Physical Review B Vol. 40 (13) American Physical Society (APS)

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Chen, Ting, Scott, J. F. (1990) Raman intensities near second-order transitions. Part II-tris-(sarcosine)calcium chloride. Journal of Raman Spectroscopy, 21 (11). 761-763 doi:10.1002/jrs.1250211110
Attia, M., Ali, M., Tipping, R. H., Poll, J. D. (1989) Predicted intensities for new Raman transitions in solid HD. Physical Review B, 40 (13) 8687-8692 doi:10.1103/physrevb.40.8687
Shawabkeh, A., Scott, J. F. (1991) Raman spectroscopy of incommensurateBa2NaNb5O15. Physical Review B, 43 (13) 10999-11004 doi:10.1103/physrevb.43.10999
Blumenfeld, Raphael, Bergman, David J. (1989) Exact calculation to second order of the effective dielectric constant of a strongly nonlinear inhomogeneous composite. Physical Review B, 40 (3) 1987-1989 doi:10.1103/physrevb.40.1987
Williams, G. M., Becker, P. C., Conway, J. G., Edelstein, N., Boatner, L. A., Abraham, M. M. (1989) Intensities of electronic Raman scattering between crystal-field levels ofCe3+inLuPO4: Nonresonant and near-resonant excitation. Physical Review B, 40 (6) 4132-4142 doi:10.1103/physrevb.40.4132
Schmidt, R. L., Kunc, K., Cardona, M., Bilz, H. (1979) Second-order Raman scattering in II-VI semiconductors: Relative intensities and trends. Physical Review B, 20 (8) 3345-3350 doi:10.1103/physrevb.20.3345
Luo, Zhengtang, Papadimitrakopoulos, Fotios, Doorn, Stephen K. (2008) Bundling effects on the intensities of second-order Raman modes in semiconducting single-walled carbon nanotubes. Physical Review B, 77 (3) doi:10.1103/physrevb.77.035421
Gâcon, J. C., Marcerou, J. F., Bouazaoui, M., Jacquier, B., Kibler, M. (1989) Two-photon transition intensities forSm2+in BaClF. Physical Review B, 40 (4) 2070-2075 doi:10.1103/physrevb.40.2070
Smentek-Mielczarek, Lidia (1989) Third-order correlation theory of electronic Raman scattering for rare-earth ions in crystals. II. Numerical analysis for ions across the lanthanide series. Physical Review B, 40 (10) 6499-6504 doi:10.1103/physrevb.40.6499
Hollis, R. L., Ryan, J. F., Scott, J. F. (1975) Spin-Flip—Plus—Phonon Raman Scattering: A New Second-Order Scattering Process. Physical Review Letters, 34 (4). 209-212 doi:10.1103/physrevlett.34.209
Vugmeister, B. E., Yacoby, Y., Toulouse, J., Rabitz, H. (1999) Second-order central peak in the Raman spectra of disordered ferroelectrics. Physical Review B, 59 (13) 8602-8606 doi:10.1103/physrevb.59.8602
 
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