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Kruithof, G. H., Klapwijk, T. M., Bakker, S. (1991) Temperature and interface-roughness dependence of the electron mobility in high-mobility Si(100) inversion layers below 4.2 K. Physical Review B, 43 (8) 6642-6649 doi:10.1103/physrevb.43.6642

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Reference TypeJournal (article/letter/editorial)
TitleTemperature and interface-roughness dependence of the electron mobility in high-mobility Si(100) inversion layers below 4.2 K
JournalPhysical Review B
AuthorsKruithof, G. H.Author
Klapwijk, T. M.Author
Bakker, S.Author
Year1991 (March 15)Volume43
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.43.6642Search in ResearchGate
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Mindat Ref. ID14110537Long-form Identifiermindat:1:5:14110537:8
GUID0
Full ReferenceKruithof, G. H., Klapwijk, T. M., Bakker, S. (1991) Temperature and interface-roughness dependence of the electron mobility in high-mobility Si(100) inversion layers below 4.2 K. Physical Review B, 43 (8) 6642-6649 doi:10.1103/physrevb.43.6642
Plain TextKruithof, G. H., Klapwijk, T. M., Bakker, S. (1991) Temperature and interface-roughness dependence of the electron mobility in high-mobility Si(100) inversion layers below 4.2 K. Physical Review B, 43 (8) 6642-6649 doi:10.1103/physrevb.43.6642
In(1991, March) Physical Review B Vol. 43 (8) American Physical Society (APS)

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Kruithof, G. H., Klapwijk, T. M. (1990) Electron transport with two occupied subbands in a Si(100) inversion layer. Physical Review B, 42 (17) 11412-11414 doi:10.1103/physrevb.42.11412
Pudalov, V. M., Brunthaler, G., Prinz, A., Bauer, G. (2002) Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si-Inversion Layers. Physical Review Letters, 88 (7). doi:10.1103/physrevlett.88.076401
Dolgopolov, V. T., Gold, A. (2002) Comment on “Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si-Inversion Layers”. Physical Review Letters, 89 (12). doi:10.1103/physrevlett.89.129701
Jassby, K. M., Vreeland, T. (1973) Dislocation Mobility in Pure Copper at 4.2 °K. Physical Review B, 8 (8) 3537-3541 doi:10.1103/physrevb.8.3537
Wu, Ching-Yuan, Thomas, G. (1972) Theory of the Electron Mobility in Inversion Layers on Oxidized Silicon Surface at Room Temperature. Physical Review B, 6 (12) 4581-4587 doi:10.1103/physrevb.6.4581
Klimov, N. N., Knyazev, D. A., Omel’yanovskii, O. E., Pudalov, V. M., Kojima, H., Gershenson, M. E. (2008) Interaction effects in conductivity of a two-valley electron system in high-mobility Si inversion layers. Physical Review B, 78 (19) doi:10.1103/physrevb.78.195308
Benzaquen, M., Walsh, D., Mazuruk, K. (1987) High-temperature mobility of puren-type InP epitaxial layers. Physical Review B, 36 (8) 4388-4393 doi:10.1103/physrevb.36.4388
Borzenets, V.V., Feher, S., Orendac, M., Semenchinsky, S.G. (1995) Electron mobility behaviour for Si(001) inversion layers near mobility threshold below 1.3 K. Physics Letters A, 204. 67-70 doi:10.1016/0375-9601(95)00460-k
Huber, A., Lorenz, H., Kotthaus, J. P., Bakker, S., Klapwijk, T. M. (1995) Lateraln-i-p-isuperlattices in Si metal-oxide-semiconductor structures. Physical Review B, 51 (8) 5028-5032 doi:10.1103/physrevb.51.5028
Mertes, K. M., Zheng, Hairong, Vitkalov, S. A., Sarachik, M. P., Klapwijk, T. M. (2001) Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field. Physical Review B, 63 (4) doi:10.1103/physrevb.63.041101
Mori, S., Ando, T. (1979) Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures. Physical Review B, 19 (12) 6433-6441 doi:10.1103/physrevb.19.6433
 
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