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Zhang, Yong (1992) Acceptorlike bound excitons in semiconductors. Physical Review B, 45 (16) 9025-9031 doi:10.1103/physrevb.45.9025

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Reference TypeJournal (article/letter/editorial)
TitleAcceptorlike bound excitons in semiconductors
JournalPhysical Review B
AuthorsZhang, YongAuthor
Year1992 (April 15)Volume45
Issue16
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.45.9025Search in ResearchGate
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Mindat Ref. ID14113265Long-form Identifiermindat:1:5:14113265:7
GUID0
Full ReferenceZhang, Yong (1992) Acceptorlike bound excitons in semiconductors. Physical Review B, 45 (16) 9025-9031 doi:10.1103/physrevb.45.9025
Plain TextZhang, Yong (1992) Acceptorlike bound excitons in semiconductors. Physical Review B, 45 (16) 9025-9031 doi:10.1103/physrevb.45.9025
In(1992, April) Physical Review B Vol. 45 (16) American Physical Society (APS)

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Zhang, Yong, Ge, Weikun, Sturge, M. D., Zheng, Jiansheng, Wu, Boxi (1993) Phonon sidebands of excitons bound to isoelectronic impurities in semiconductors. Physical Review B, 47 (11) 6330-6339 doi:10.1103/physrevb.47.6330
Lakhno, V. D. (1992) Continuum excitons in semiconductors. Physical Review B, 46 (12) 7519-7527 doi:10.1103/physrevb.46.7519
Trushin, Maxim (2019) Tightly bound excitons in two-dimensional semiconductors with a flat valence band. Physical Review B, 99 (20) doi:10.1103/physrevb.99.205307
Ge, Weikun, Zhang, Yong, Mi, Donglin, Zheng, Jiansheng, Yan, Bingzhang, Wu, Boxi (1992) Comment on ‘‘Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons’’ and ‘‘ Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons’’. Physical Review B, 46 (8) 5004-5005 doi:10.1103/physrevb.46.5004
Sturge, M. D., Cohen, E. (1992) Comment on ‘‘Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons’’. Physical Review B, 45 (19) 11370-11371 doi:10.1103/physrevb.45.11370
De Groote, J. J., Hornos, J. E., Coelho, H. T., Caldwell, C. D. (1992) Hyperspherical formulation of impurity-bound excitons in semiconductors. Physical Review B, 46 (4) 2101-2108 doi:10.1103/physrevb.46.2101
Bauer, Gerrit E. W. (1992) Excitons in the quasi-two-dimensional electron gas. Physical Review B, 45 (16) 9153-9162 doi:10.1103/physrevb.45.9153
Stauffer, L., Stebe, B. (1989) Binding energy of ionized-donor-bound excitons in two-dimensional semiconductors. Physical Review B, 39 (8) 5345-5348 doi:10.1103/physrevb.39.5345
Hong, X., Ishihara, T., Nurmikko, A. V. (1992) Dielectric confinement effect on excitons inPbI4-based layered semiconductors. Physical Review B, 45 (12) 6961-6964 doi:10.1103/physrevb.45.6961
Sottile, Francesco, Marsili, Margherita, Olevano, Valerio, Reining, Lucia (2007) Efficientab initiocalculations of bound and continuum excitons in the absorption spectra of semiconductors and insulators. Physical Review B, 76 (16) doi:10.1103/physrevb.76.161103
Shah, Jagdeep, Buehler, E. (1971) Zeeman Effect of Bound Excitons in II-IV-V2Chalcopyrite Semiconductors. Physical Review B, 4 (8) 2827-2829 doi:10.1103/physrevb.4.2827
 
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