Sano, Nobuyuki, Yoshii, Akira (1992) Impact-ionization theory consistent with a realistic band structure of silicon. Physical Review B, 45 (8) 4171-4180 doi:10.1103/physrevb.45.4171
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Impact-ionization theory consistent with a realistic band structure of silicon | ||
| Journal | Physical Review B | ||
| Authors | Sano, Nobuyuki | Author | |
| Yoshii, Akira | Author | ||
| Year | 1992 (February 15) | Volume | 45 |
| Issue | 8 | ||
| Publisher | American Physical Society (APS) | ||
| DOI | doi:10.1103/physrevb.45.4171Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 14114552 | Long-form Identifier | mindat:1:5:14114552:7 |
| GUID | 0 | ||
| Full Reference | Sano, Nobuyuki, Yoshii, Akira (1992) Impact-ionization theory consistent with a realistic band structure of silicon. Physical Review B, 45 (8) 4171-4180 doi:10.1103/physrevb.45.4171 | ||
| Plain Text | Sano, Nobuyuki, Yoshii, Akira (1992) Impact-ionization theory consistent with a realistic band structure of silicon. Physical Review B, 45 (8) 4171-4180 doi:10.1103/physrevb.45.4171 | ||
| In | (1992, February) Physical Review B Vol. 45 (8) American Physical Society (APS) | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
 | |
| |
| |
| |
| |
| |
| |
| |
| |
| |
|