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Voliotis, V., Grousson, R., Lavallard, P., Planel, R. (1995) Binding energies and oscillator strengths of excitons in thin GaAs/Ga0.7Al0.3As quantum wells. Physical Review B, 52 (15) 10725-10728 doi:10.1103/physrevb.52.10725

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Reference TypeJournal (article/letter/editorial)
TitleBinding energies and oscillator strengths of excitons in thin GaAs/Ga0.7Al0.3As quantum wells
JournalPhysical Review B
AuthorsVoliotis, V.Author
Grousson, R.Author
Lavallard, P.Author
Planel, R.Author
Year1995 (October 15)Volume52
Issue15
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.52.10725Search in ResearchGate
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Mindat Ref. ID14130109Long-form Identifiermindat:1:5:14130109:1
GUID0
Full ReferenceVoliotis, V., Grousson, R., Lavallard, P., Planel, R. (1995) Binding energies and oscillator strengths of excitons in thin GaAs/Ga0.7Al0.3As quantum wells. Physical Review B, 52 (15) 10725-10728 doi:10.1103/physrevb.52.10725
Plain TextVoliotis, V., Grousson, R., Lavallard, P., Planel, R. (1995) Binding energies and oscillator strengths of excitons in thin GaAs/Ga0.7Al0.3As quantum wells. Physical Review B, 52 (15) 10725-10728 doi:10.1103/physrevb.52.10725
In(1995, October) Physical Review B Vol. 52 (15) American Physical Society (APS)

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Voliotis, V., Grousson, R., Lavallard, P., Ivchenko, E. L., Kiselev, A. A., Planel, R. (1994) Absorption coefficient in type-II GaAs/AlAs short-period superlattices. Physical Review B, 49 (4) 2576-2584 doi:10.1103/physrevb.49.2576
Grousson, R., Voliotis, V., Grandjean, N., Massies, J., Leroux, M., Deparis, C. (1997) Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells. Physical Review B, 55 (8) 5253-5258 doi:10.1103/physrevb.55.5253
VOLIOTIS, V., GROUSSON, R., LAVALLARD, P., IVCHENKO, E. L., KISELEV, A. A., PLANEL, R. (1993) Γ-X mixing in type-II GaAs/AlAs short period superlattices. Le Journal de Physique IV, 3. 237-240 doi:10.1051/jp4:1993545
Bellessa, J., Voliotis, V., Grousson, R., Wang, X. L., Ogura, M., Matsuhata, H. (1998) Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructures. Physical Review B, 58 (15) 9933-9940 doi:10.1103/physrevb.58.9933
Piao, Z. S., Nakayama, M., Nishimura, H. (1996) Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1−xAs/GaAs strained quantum wells. Physical Review B, 54 (15) 10312-10315 doi:10.1103/physrevb.54.10312
Linnerud, I., Chao, K. A. (1994) Exciton binding energies and oscillator strengths in a symmetricAlxGa1−xAs/GaAs double quantum well. Physical Review B, 49 (12) 8487-8490 doi:10.1103/physrevb.49.8487
Gourdon, C., Mashkov, I. V., Lavallard, P., Planel, R. (1998) Spectroscopic evidence of the dissymmetry of direct and inverted interfaces in GaAs/AlAs type-II superlattices. Physical Review B, 57 (7) 3955-3960 doi:10.1103/physrevb.57.3955
Pfeffer, P., Zawadzki, W. (1995) Spin splitting of conduction subbands in GaAs-Ga0.7Al0.3As heterostructures. Physical Review B, 52 (20) doi:10.1103/physrevb.52.r14332
Dubin, F., Berréhar, J., Grousson, R., Schott, M., Voliotis, V. (2006) Evidence of polariton-induced transparency in a single organic quantum wire. Physical Review B, 73 (12) doi:10.1103/physrevb.73.121302
Winkler, R. (1995) Excitons and fundamental absorption in quantum wells. Physical Review B, 51 (20) 14395-14409 doi:10.1103/physrevb.51.14395
Wu, Ji-Wei (1989) Binding energies of excitons in semiconductor quantum wells: Quantum subband interference effect. Physical Review B, 39 (17) 12944-12947 doi:10.1103/physrevb.39.12944
 
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