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Romano, L. T., Bringans, R. D., Zhou, X., Kirk, W. P. (1995) Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001) Physical Review B, 52 (15) 11201-11205 doi:10.1103/physrevb.52.11201

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Reference TypeJournal (article/letter/editorial)
TitleInterface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001)
JournalPhysical Review B
AuthorsRomano, L. T.Author
Bringans, R. D.Author
Zhou, X.Author
Kirk, W. P.Author
Year1995 (October 15)Volume52
Issue15
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.52.11201Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14130176Long-form Identifiermindat:1:5:14130176:3
GUID0
Full ReferenceRomano, L. T., Bringans, R. D., Zhou, X., Kirk, W. P. (1995) Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001) Physical Review B, 52 (15) 11201-11205 doi:10.1103/physrevb.52.11201
Plain TextRomano, L. T., Bringans, R. D., Zhou, X., Kirk, W. P. (1995) Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001) Physical Review B, 52 (15) 11201-11205 doi:10.1103/physrevb.52.11201
In(1995, October) Physical Review B Vol. 52 (15) American Physical Society (APS)

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Romano, L. T., Bringans, R. D., Knall, J., Biegelsen, D. K., Garcia, Alberto, Northrup, John E., O’Keefe, M. A. (1994) Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates. Physical Review B, 50 (7) 4416-4423 doi:10.1103/physrevb.50.4416
Stollenwerk, A. J., Krause, M. R., Idell, D. H., Moore, R., LaBella, V. P. (2006) Probing the hot-electron transport properties and interface band structure ofFe∕Si(001) andFe81C19∕Si(001) Schottky diodes. Physical Review B, 74 (15) doi:10.1103/physrevb.74.155328
Stigler, W., Pavone, P., Fritsch, J. (1998) Structural and dynamical properties of Ge(001) in comparison with Si(001) and C(001) Physical Review B, 58 (20) 13686-13697 doi:10.1103/physrevb.58.13686
Chambers, S. A., Tran, T. T. (1993) Geometric structure at the Si/GaAs(001) interface: The relationship to AlAs/Si/GaAs band offsets. Physical Review B, 47 (19) 13023-13026 doi:10.1103/physrevb.47.13023
Romano, L. T., Knall, J., Bringans, R. D., Biegelsen, D. K. (1994) Misfit dislocations in ZnSe grown on vicinal Si(001) substrates. Applied Physics Letters, 65 (7). 869-871 doi:10.1063/1.112186
Kipp, Lutz, Biegelsen, D. K., Northrup, J. E., Swartz, L.-E., Bringans, R. D. (1996) Reflectance Difference Spectroscopy: Experiment and Theory for the Model System Si(001):As and Application to Si(001). Physical Review Letters, 76 (15). 2810-2813 doi:10.1103/physrevlett.76.2810
Gunnella, R., Castrucci, P., Pinto, N., Davoli, I., Sébilleau, D., De Crescenzi, M. (1996) X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface. Physical Review B, 54 (12) 8882-8891 doi:10.1103/physrevb.54.8882
Wassermeier, M., Behrend, J., Däweritz, L., Ploog, K. (1995) Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition. Physical Review B, 52 (4) doi:10.1103/physrevb.52.r2269
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