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Wassermeier, M., Behrend, J., Ploog, K. H., Zettler, J.-T., Stahrenberg, K., Richter, W. (1996) Insituspectroscopic ellipsometry of GaAs(001) surface reconstructions. Physical Review B, 53 (20) 13542-13546 doi:10.1103/physrevb.53.13542

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Reference TypeJournal (article/letter/editorial)
TitleInsituspectroscopic ellipsometry of GaAs(001) surface reconstructions
JournalPhysical Review B
AuthorsWassermeier, M.Author
Behrend, J.Author
Ploog, K. H.Author
Zettler, J.-T.Author
Stahrenberg, K.Author
Richter, W.Author
Year1996 (May 15)Volume53
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.53.13542Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14133119Long-form Identifiermindat:1:5:14133119:7
GUID0
Full ReferenceWassermeier, M., Behrend, J., Ploog, K. H., Zettler, J.-T., Stahrenberg, K., Richter, W. (1996) Insituspectroscopic ellipsometry of GaAs(001) surface reconstructions. Physical Review B, 53 (20) 13542-13546 doi:10.1103/physrevb.53.13542
Plain TextWassermeier, M., Behrend, J., Ploog, K. H., Zettler, J.-T., Stahrenberg, K., Richter, W. (1996) Insituspectroscopic ellipsometry of GaAs(001) surface reconstructions. Physical Review B, 53 (20) 13542-13546 doi:10.1103/physrevb.53.13542
In(1996, May) Physical Review B Vol. 53 (20) American Physical Society (APS)

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Wassermeier, M, Behrend, J, Zettler, J.-T, Stahrenberg, K, Ploog, K.H (1996) In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions. Applied Surface Science, 107. 48-52 doi:10.1016/s0169-4332(96)00497-7
Behrend, J., Wassermeier, M., Braun, W., Krispin, P., Ploog, K. H. (1996) Formation of GaAs/AlAs(001) interfaces studied by scanning tunneling microscopy. Physical Review B, 53 (15) 9907-9912 doi:10.1103/physrevb.53.9907
Zettler, J.-T., Rumberg, J., Ploska, K., Stahrenberg, K., Pristovsek, M., Richter, W., Wassermeier, M., Schützendübe, P., Behrend, J., Däweritz, L. (1995) Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001). physica status solidi (a), 152 (1). 35-47 doi:10.1002/pssa.2211520104
Wassermeier, M., Behrend, J., Däweritz, L., Ploog, K. (1995) Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition. Physical Review B, 52 (4) doi:10.1103/physrevb.52.r2269
Rumberg, J., Zettler, J.-T., Stahrenberg, K., Ploska, K., Richter, W., Däweritz, L., Schützendübe, P., Wassermeier, M. (1995) Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001). Surface Science, 337 (1). 103-108 doi:10.1016/0039-6028(95)00540-4
Yang, H., Brandt, O., Wassermeier, M., Behrend, J., Schönherr, H. P., Ploog, K. H. (1996) Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs. Applied Physics Letters, 68 (2). 244-246 doi:10.1063/1.116474
Wassermeier, M., Sudijono, J., Johnson, M. D., Leung, K. T., Orr, B. G., Däweritz, L., Ploog, K. (1995) Reconstruction of the GaAs (311)Asurface. Physical Review B, 51 (20) 14721-14724 doi:10.1103/physrevb.51.14721
Wassermeier, M, Yamada, A, Yang, H, Brandt, O, Behrend, J, Ploog, K.H (1997) Atomic structure of the surface reconstructions of zincblende GaN(001). Surface Science, 385 (1). 178-186 doi:10.1016/s0039-6028(97)00259-8
Behrend, J., Wassermeier, M., Däweritz, L., Ploog, K.H. (1995) Domain formation on the reconstructed GaAs(001) surface. Surface Science, 342 (1). 63-68 doi:10.1016/0039-6028(95)00762-8
Oigawa, H., Wassermeier, M., Behrend, J., Däweritz, L., Ploog, K.H. (1997) Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition. Surface Science, 376 (1). 185-191 doi:10.1016/s0039-6028(97)01310-1
Oigawa, H., Wassermeier, M., Behrend, J., Däweritz, L., Ploog, K.H. (1998) Controlled anisotropic ordering of Be deposited on the GaAs(001) surface. Surface Science, 399 (1). 39-48 doi:10.1016/s0039-6028(97)00809-1
 
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