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Gunnella, R., Castrucci, P., Pinto, N., Davoli, I., Sébilleau, D., De Crescenzi, M. (1996) X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface. Physical Review B, 54 (12) 8882-8891 doi:10.1103/physrevb.54.8882

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Reference TypeJournal (article/letter/editorial)
TitleX-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface
JournalPhysical Review B
AuthorsGunnella, R.Author
Castrucci, P.Author
Pinto, N.Author
Davoli, I.Author
Sébilleau, D.Author
De Crescenzi, M.Author
Year1996 (September 15)Volume54
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.54.8882Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14134612Long-form Identifiermindat:1:5:14134612:2
GUID0
Full ReferenceGunnella, R., Castrucci, P., Pinto, N., Davoli, I., Sébilleau, D., De Crescenzi, M. (1996) X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface. Physical Review B, 54 (12) 8882-8891 doi:10.1103/physrevb.54.8882
Plain TextGunnella, R., Castrucci, P., Pinto, N., Davoli, I., Sébilleau, D., De Crescenzi, M. (1996) X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface. Physical Review B, 54 (12) 8882-8891 doi:10.1103/physrevb.54.8882
In(1996, September) Physical Review B Vol. 54 (12) American Physical Society (APS)

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Davoli, I., Gunnella, R., Castrucci, P., Pinto, N., Bernardini, R., De Crescenzi, M. (1996) XPD study of atomic intermixing at the Ge/Si(001) interface. Applied Surface Science, 102. 102-106 doi:10.1016/0169-4332(96)00030-x
Gunnella, R., Castrucci, P., Pinto, N., Cucculelli, P., Davoli, I., Sébilleau, D., De Crescenzi, M. (1998) Surfactant-Mediated Growth of Ge/Si(001) Interface Studied by XPD. Surface Review and Letters, 5 (1). 157-161 doi:10.1142/s0218625x9800030x
CASTRUCCI, P., GUNNELLA, R., PINTO, N., BERNARDINI, R., DE CRESCENZI, M., SACCHI, M. (2000) NEAR EDGE X-RAY ABSORPTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDIES OF THE STRUCTURAL ENVIRONMENT OF Ge–Si SYSTEMS. Surface Review and Letters, 7 (3). 307-331 doi:10.1142/s0218625x00000282
Castrucci, P., Gunnella, R., De Crescenzi, M., Sacchi, M., Dufour, G., Rochet, F. (1998) Exchange mechanisms at the Ge/Si(001) interface from a multiple-scattering analysis of the GeL3absorption edge. Physical Review B, 58 (7) 4095-4101 doi:10.1103/physrevb.58.4095
De Crescenzi, M., Gunnella, R., Bernardini, R., De Marco, M., Davoli, I. (1995) Auger-electron diffraction in the low kinetic-energy range: The Si(111)7×7 surface reconstruction and Ge/Si interface formation. Physical Review B, 52 (3) 1806-1815 doi:10.1103/physrevb.52.1806
Chambers, S. A., Loebs, V. A. (1990) Elastic strain at pseudomorphic semiconductor heterojunctions studied by x-ray photoelectron diffraction: Ge/Si(001) and Si/Ge(001) Physical Review B, 42 (8) 5109-5116 doi:10.1103/physrevb.42.5109
d’Acapito, F., Castrucci, P., Pinto, N., Gunnella, R., De Crescenzi, M., Davoli, I. (2002) The effect of Sb surfactant on the growth of (GenSim)p layers on Si: a reflEXAFS study. Surface Science, 518 (3). 183-191 doi:10.1016/s0039-6028(02)02117-9
Castrucci, P., Gunnella, R., Pinto, N., De Crescenzi, M., Sacchi, M., Dufour, G., Rochet, F. (1998) Evidence of ordered phase of Ge–Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge. Surface Science, 416 (3). 466-471 doi:10.1016/s0039-6028(98)00631-1
Castrucci, P., Gunnella, R., Crescenzi, M. De, Sacchi, M., Dufour, G., Rochet, F. (1999) Electronic density of empty states of Ge/Si(111) epitaxial layers: Theory and experiment. Physical Review B, 60 (8) 5759-5769 doi:10.1103/physrevb.60.5759
Cho, Jun-Hyung, Kang, Myung-Ho (2000) Ge-Si intermixing at the Ge/Si(001) surface. Physical Review B, 61 (3) 1688-1691 doi:10.1103/physrevb.61.1688
Chambers, S. A., Loebs, V. A. (1989) X-ray-photoelectron-diffraction investigation of strain at the Si/Ge(001) interface. Physical Review Letters, 63 (6). 640-643 doi:10.1103/physrevlett.63.640
 
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