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Langbein, W., Gislason, H., Hvam, J. M. (1999) Transient four-wave mixing in T-shaped GaAs quantum wires. Physical Review B, 60 (24) 16667-16674 doi:10.1103/physrevb.60.16667

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Reference TypeJournal (article/letter/editorial)
TitleTransient four-wave mixing in T-shaped GaAs quantum wires
JournalPhysical Review B
AuthorsLangbein, W.Author
Gislason, H.Author
Hvam, J. M.Author
Year1999 (December 15)Volume60
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.60.16667Search in ResearchGate
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Mindat Ref. ID14149715Long-form Identifiermindat:1:5:14149715:2
GUID0
Full ReferenceLangbein, W., Gislason, H., Hvam, J. M. (1999) Transient four-wave mixing in T-shaped GaAs quantum wires. Physical Review B, 60 (24) 16667-16674 doi:10.1103/physrevb.60.16667
Plain TextLangbein, W., Gislason, H., Hvam, J. M. (1999) Transient four-wave mixing in T-shaped GaAs quantum wires. Physical Review B, 60 (24) 16667-16674 doi:10.1103/physrevb.60.16667
In(1999, December) Physical Review B Vol. 60 (24) American Physical Society (APS)

See Also

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Langbein, W., Gislason, H., Hvam, J. M. (1996) Optimization of the confinement energy of quantum-wire states in T-shaped GaAs/AlxGa1−xAs structures. Physical Review B, 54 (20) 14595-14603 doi:10.1103/physrevb.54.14595
Borri, P., Langbein, W., Mørk, J., Hvam, J. M., Heinrichsdorff, F., Mao, M.-H., Bimberg, D. (1999) Dephasing in InAs/GaAs quantum dots. Physical Review B, 60 (11) 7784-7787 doi:10.1103/physrevb.60.7784
Birkedal, D., Lyssenko, V. G., Pantke, K.-H., Erland, J., Hvam, J. M. (1995) Nanoroughness localization of excitons in GaAs multiple quantum wells studied by transient four-wave mixing. Physical Review B, 51 (12) 7977-7980 doi:10.1103/physrevb.51.7977
Gislason, H., Langbein, W., Hvam, J. M. (1996) Asymmetric GaAs/AlGaAs T wires with large confinement energies. Applied Physics Letters, 69 (21). 3248-3250 doi:10.1063/1.118025
Wagner, H. P., Langbein, W., Hvam, J. M., Bacher, G., Kümmell, T., Forchel, A. (1998) Exciton dephasing in ZnSe quantum wires. Physical Review B, 57 (3) 1797-1800 doi:10.1103/physrevb.57.1797
Wagner, H. P., Langbein, W., Hvam, J. M. (1999) Mixed biexcitons in single quantum wells. Physical Review B, 59 (7) 4584-4587 doi:10.1103/physrevb.59.4584
Gislason, H., So/rensen, C. B., Hvam, J. M. (1996) (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires. Applied Physics Letters, 69 (6). 800-802 doi:10.1063/1.117896
Borri, P., Langbein, W., Hvam, J. M., Martelli, F. (1999) Binding energy and dephasing of biexcitons inIn0.18Ga0.82As/GaAssingle quantum wells. Physical Review B, 60 (7) 4505-4508 doi:10.1103/physrevb.60.4505
Gindele, F., Woggon, U., Langbein, W., Hvam, J. M., Leonardi, K., Hommel, D., Selke, H. (1999) Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures. Physical Review B, 60 (12) 8773-8782 doi:10.1103/physrevb.60.8773
Wagner, H. P., Schätz, A., Langbein, W., Hvam, J. M., Smirl, Arthur L. (1999) Interaction-induced effects in the nonlinear coherent response of quantum-well excitons. Physical Review B, 60 (7) 4454-4457 doi:10.1103/physrevb.60.4454
Langbein, W., Hvam, J. M. (1999) Localization-enhanced biexciton binding in semiconductors. Physical Review B, 59 (23) 15405-15408 doi:10.1103/physrevb.59.15405
 
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