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Gobato, Y. Galvão, Triques, A. L. C., Rivera, P. H., Schulz, P. A. (1999) Spectroscopy of growth islands inGaAs/In0.1Ga0.9As/AlAsdouble-barrier structures from photoluminescence and resonant tunneling studies. Physical Review B, 60 (8) 5664-5672 doi:10.1103/physrevb.60.5664

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Reference TypeJournal (article/letter/editorial)
TitleSpectroscopy of growth islands inGaAs/In0.1Ga0.9As/AlAsdouble-barrier structures from photoluminescence and resonant tunneling studies
JournalPhysical Review B
AuthorsGobato, Y. GalvãoAuthor
Triques, A. L. C.Author
Rivera, P. H.Author
Schulz, P. A.Author
Year1999 (August 15)Volume60
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.60.5664Search in ResearchGate
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Mindat Ref. ID14150384Long-form Identifiermindat:1:5:14150384:6
GUID0
Full ReferenceGobato, Y. Galvão, Triques, A. L. C., Rivera, P. H., Schulz, P. A. (1999) Spectroscopy of growth islands inGaAs/In0.1Ga0.9As/AlAsdouble-barrier structures from photoluminescence and resonant tunneling studies. Physical Review B, 60 (8) 5664-5672 doi:10.1103/physrevb.60.5664
Plain TextGobato, Y. Galvão, Triques, A. L. C., Rivera, P. H., Schulz, P. A. (1999) Spectroscopy of growth islands inGaAs/In0.1Ga0.9As/AlAsdouble-barrier structures from photoluminescence and resonant tunneling studies. Physical Review B, 60 (8) 5664-5672 doi:10.1103/physrevb.60.5664
In(1999, August) Physical Review B Vol. 60 (8) American Physical Society (APS)

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Galvão Gobato, Y., Triques, A. L. C., Rivera, P. H., Schulz, P. A., Guldner, Y., Vinter, B. (1997) Optical probing of interface roughness in resonant tunneling structures. Journal of Applied Physics, 82 (2). 810-812 doi:10.1063/1.365776
Galvão, Y., Triques, A.L.C., Schulz, P. A. (1997) Interface Roughness Effects in Resonant Tunneling Structures. physica status solidi (a), 164 (1). 137-140 doi:10.1002/1521-396x(199711)164:1<137::aid-pssa137>3.0.co;2-x
de Carvalho, H. B., Brasil, M. J. S. P., Lopez-Richard, V., Galvão Gobato, Y., Marques, G. E., Camps, I., Dacal, L. C. O., Henini, M., Eaves, L., Hill, G. (2006) Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices. Physical Review B, 74 (4) doi:10.1103/physrevb.74.041305
de Carvalho, H. B., Galvão Gobato, Y., Brasil, M. J. S. P., Lopez-Richard, V., Marques, G. E., Camps, I., Henini, M., Eaves, L., Hill, G. (2006) Voltage-controlled hole spin injection in nonmagneticGaAs∕AlAsresonant tunneling structures. Physical Review B, 73 (15) doi:10.1103/physrevb.73.155317
Gobato, Y. Galvão, Berroir, J. M., Guldner, Y., Vinter, B., Nagle, J., Rivera, P. H. (1996) Inter-Landau level tunneling in an InGaAs/AlAs/GaAs structure under tilted magnetic field. physica status solidi (b), 193 (1). 119-124 doi:10.1002/pssb.2221930112
Vercik, A., Gobato, Y. Galvão, Camps, I., Marques, G. E., Brasil, M. J. S. P., Makler, S. S. (2005) Kinetics of excitonic complexes on tunneling devices. Physical Review B, 71 (7) doi:10.1103/physrevb.71.075310
Schulz, P. A., Gonçalves da Silva, C. E. T. (1988) Disorder effects on resonant tunneling in double-barrier quantum wells. Physical Review B, 38 (15) 10718-10723 doi:10.1103/physrevb.38.10718
Chen, L. Y., Ting, C. S. (1991) Dynamic properties of double-barrier resonant-tunneling structures. Physical Review B, 43 (3) 2097-2105 doi:10.1103/physrevb.43.2097
Skolnick, M. S., Hayes, D. G., Simmonds, P. E., Higgs, A. W., Smith, G. W., Hutchinson, H. J., Whitehouse, C. R., Eaves, L., Henini, M., Hughes, O. H., Leadbeater, M. L., Halliday, D. P. (1990) Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B41, 10754 (1990)]. Physical Review B, 42 (8) 5364 doi:10.1103/physrevb.42.5364
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