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Nickel, N. H., Lengsfeld, P., Sieber, I. (2000) Raman spectroscopy of heavily doped polycrystalline silicon thin films. Physical Review B, 61 (23) 15558-15561 doi:10.1103/physrevb.61.15558

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Reference TypeJournal (article/letter/editorial)
TitleRaman spectroscopy of heavily doped polycrystalline silicon thin films
JournalPhysical Review B
AuthorsNickel, N. H.Author
Lengsfeld, P.Author
Sieber, I.Author
Year2000 (June 15)Volume61
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.15558Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14152087Long-form Identifiermindat:1:5:14152087:4
GUID0
Full ReferenceNickel, N. H., Lengsfeld, P., Sieber, I. (2000) Raman spectroscopy of heavily doped polycrystalline silicon thin films. Physical Review B, 61 (23) 15558-15561 doi:10.1103/physrevb.61.15558
Plain TextNickel, N. H., Lengsfeld, P., Sieber, I. (2000) Raman spectroscopy of heavily doped polycrystalline silicon thin films. Physical Review B, 61 (23) 15558-15561 doi:10.1103/physrevb.61.15558
In(2000, June) Physical Review B Vol. 61 (23) American Physical Society (APS)

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Lengsfeld, P., Brehme, S., Brendel, K., Genzel, Ch., Nickel, N. H. (2003) Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon. physica status solidi (b), 235 (1). 170-178 doi:10.1002/pssb.200301414
Nickel, N. H., Beckers, I. E. (2002) Hydrogen migration in doped and undoped polycrystalline and microcrystalline silicon. Physical Review B, 66 (7) doi:10.1103/physrevb.66.075211
Christiansen, S., Lengsfeld, P., Krinke, J., Nerding, M., Nickel, N. H., Strunk, H. P. (2001) Nature of grain boundaries in laser crystallized polycrystalline silicon thin films. Journal of Applied Physics, 89 (10). 5348-5354 doi:10.1063/1.1360703
Schmid, P. E. (1981) Optical absorption in heavily doped silicon. Physical Review B, 23 (10) 5531-5536 doi:10.1103/physrevb.23.5531
Tokura, Y., Saku, T., Tarucha, S., Horikoshi, Y. (1992) Anisotropic roughness scattering at a heterostructure interface. Physical Review B, 46 (23) 15558-15561 doi:10.1103/physrevb.46.15558
Oszwałdowski, M., Berus, T., Dugaev, V. K. (2002) Weak localization in InSb thin films heavily doped with lead. Physical Review B, 65 (23) doi:10.1103/physrevb.65.235418
van Huffelen, W. M., Klapwijk, T. M., Suurmeijer, E. P. Th. M. (1993) Critical temperature of thin niobium films on heavily doped silicon. Physical Review B, 47 (9) 5151-5156 doi:10.1103/physrevb.47.5151
Nickel, N. H., Jackson, W. B., Wu, I. W., Tsai, C. C., Chiang, A. (1995) Hydrogen permeation through thin silicon oxide films. Physical Review B, 52 (11) 7791-7794 doi:10.1103/physrevb.52.7791
Nickel, N. H., Anderson, G. B., Johnson, R. I. (1997) Grain-boundary defects in laser-crystallized polycrystalline silicon. Physical Review B, 56 (19) 12065-12068 doi:10.1103/physrevb.56.12065
Weizman, M., Nickel, N. H., Sieber, I., Yan, B. (2008) Laser-induced self-organization in silicon-germanium thin films. Journal of Applied Physics, 103 (9). 93536pp. doi:10.1063/1.2919772
Brendel, K., Lengsfeld, P., Sieber, I., Schöpke, A., Nickel, N. H., Fuhs, W., Nerding, M., Strunk, H. P. (2002) Excimer laser crystallization of amorphous silicon on molybdenum coated glass substrates. Journal of Applied Physics, 91 (5). 2969-2973 doi:10.1063/1.1448678
 
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