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Zhang, Yong, Mascarenhas, A. (2000) Isoelectronic impurity states in GaAs:N. Physical Review B, 61 (23) 15562-15564 doi:10.1103/physrevb.61.15562

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Reference TypeJournal (article/letter/editorial)
TitleIsoelectronic impurity states in GaAs:N
JournalPhysical Review B
AuthorsZhang, YongAuthor
Mascarenhas, A.Author
Year2000 (June 15)Volume61
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.15562Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14152088Long-form Identifiermindat:1:5:14152088:1
GUID0
Full ReferenceZhang, Yong, Mascarenhas, A. (2000) Isoelectronic impurity states in GaAs:N. Physical Review B, 61 (23) 15562-15564 doi:10.1103/physrevb.61.15562
Plain TextZhang, Yong, Mascarenhas, A. (2000) Isoelectronic impurity states in GaAs:N. Physical Review B, 61 (23) 15562-15564 doi:10.1103/physrevb.61.15562
In(2000, June) Physical Review B Vol. 61 (23) American Physical Society (APS)

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Zhang, Yong, Mascarenhas, A., Xin, H. P., Tu, C. W. (2000) Formation of an impurity band and its quantum confinement in heavily doped GaAs:N. Physical Review B, 61 (11) 7479-7482 doi:10.1103/physrevb.61.7479
Kita, Takashi, Wada, Osamu (2006) Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique. Physical Review B, 74 (3) doi:10.1103/physrevb.74.035213
Fluegel, B., Zhang, Yong, Geisz, J. F., Mascarenhas, A. (2005) Confirmation of the impurity-band model forGaP1−xNx. Physical Review B, 72 (7) doi:10.1103/physrevb.72.073203
Zhang, Yong, Mascarenhas, A., Xin, H. P., Tu, C. W. (2000) Valence-band splitting and shear deformation potential of diluteGaAs1−xNxalloys. Physical Review B, 61 (7) 4433-4436 doi:10.1103/physrevb.61.4433
Kayanuma, Yosuke (2000) Hydrogenic impurity states at a semiconductor edge. Physical Review B, 62 (23) 15334-15336 doi:10.1103/physrevb.62.15334
Cheong, Hyeonsik M., Zhang, Yong, Mascarenhas, Angelo, Geisz, John F. (2000) Nitrogen-induced levels inGaAs1−xNxstudied with resonant Raman scattering. Physical Review B, 61 (20) 13687-13690 doi:10.1103/physrevb.61.13687
Karazhanov, S. Zh., Zhang, Yong, Wang, L.-W., Mascarenhas, A., Deb, S. (2003) Resonant defect states and strong lattice relaxation of oxygen vacancies inWO3. Physical Review B, 68 (23) doi:10.1103/physrevb.68.233204
Zhang, Yong, Fluegel, B., Mascarenhas, A., Xin, H., Tu, C. (2000) Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band. Physical Review B, 62 (7) 4493-4500 doi:10.1103/physrevb.62.4493
Zhang, Wei-Min (2000) Underlying pairing states in cuprate superconductors. Physical Review B, 61 (2) doi:10.1103/physrevb.61.r898
Zhang, Yong, Fluegel, B., Hanna, M. C., Mascarenhas, A., Wang, Lin-Wang, Wang, Y. J., Wei, X. (2003) Impurity perturbation to the host band structure and recoil of the impurity state. Physical Review B, 68 (7) doi:10.1103/physrevb.68.075210
Smith, S., Zhang, Yong, Mascarenhas, A., Hanna, M. (2004) Effects of localization on the excitonic linewidth in partially orderedGaxIn1−xPalloys. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235301
 
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